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P0690ATFS डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode MOSFET - UNIKC

भाग संख्या P0690ATFS
समारोह N-Channel Enhancement Mode MOSFET
मैन्युफैक्चरर्स UNIKC 
लोगो UNIKC लोगो 
पूर्व दर्शन
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<?=P0690ATFS?> डेटा पत्रक पीडीएफ

P0690ATFS pdf
P0690ATF / P0690ATFS
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Gate Voltage Drain Current
IDSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±30V
VDS = 480V, VGS = 0V, TC = 25 °C
VDS = 400V, VGS = 0V , TC = 100 °C
900
2
3.4 4
±100
1
100
Drain-Source On-State
Resistance1
RDS(ON)
VGS = 10V, ID = 3A
2 2.35
Forward Transconductance1
gfs
VDS = 10V, ID = 3A
6
DYNAMIC
Input Capacitance
Ciss
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge2
Qg
Gate-Source Charge2
Qgs VDD = 720V, VGS = 10V, ID = 6A
Gate-Drain Charge2
Qgd
Turn-On Delay Time2
td(on)
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDD = 450V, ID = 6A, RG = 6Ω
Fall Time2
tf
1610
89
9
34
10.5
11
80
190
120
130
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 6A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 6A,
dlF/dt = 100A / μS
545
3.6
1Pulse test : Pulse Width 380 msec, Duty Cycle 2.
2Independent of operating temperature.
3 Pulse width limited by maximum junction temperature.
6
1.4
UNIT
V
nA
mA
Ω
S
pF
nC
nS
A
V
nS
μC
Ver 1.0
2 2012/6/14

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डाउनलोड[ P0690ATFS Datasheet.PDF ]


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