DataSheet.in

FQH90N10V2 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - MOSFET - Fairchild Semiconductor

भाग संख्या FQH90N10V2
समारोह MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=FQH90N10V2?> डेटा पत्रक पीडीएफ

FQH90N10V2 pdf
Package Marking and Ordering Information
Device Marking
HV290N10
Device
FQH90N10V2
Package
TO-247
Reel Size
-
Tape Width
-
Quantity
30
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Min.
Off Characteristics
BVDSS
BVDSS
/ TJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current, Forward
IGSSR
Gate-Body Leakage Current, Reverse
On Characteristics
VGS = 0V, ID = 250µA
ID = 250µA, Referenced to 25°C
VDS = 100V, VGS = 0V
VDS = 80V, TC = 150°C
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
100
--
--
--
--
--
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250µA
VGS = 10V, ID = 52.5A
2.0
--
gFS Forward Transconductance
Dynamic Characteristics
VDS = 40V, ID = 52.5A
(Note 4)
--
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics
VDS = 25V, VGS = 0V,
f = 1.0MHz
--
--
--
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
VDD = 100V, ID = 90A
RG = 25
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
VDS = 80V, ID = 90A
VGS = 10V
Qgd Gate-Drain Charge
Drain-Source Diode Characteristics and Maximum Ratings
(Note 4, 5)
(Note 4, 5)
--
--
--
--
--
--
--
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 105A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, IS = 90A
dIF/dt =100A/µs
(Note 4)
--
--
--
--
--
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 0.22mH, IAS = 105A, VDD = 50V, RG = 25, Starting TJ = 25°C
3. ISD 105A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width 300µs, Duty Cycle 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Typ.
--
0.1
--
--
--
--
--
8.5
72
4730
1180
300
52
492
304
355
147
28
60
--
--
--
114
0.54
Max Units
--
--
1
10
100
-100
V
V/°C
µA
µA
nA
nA
4.0 V
10 m
-- S
6150
1530
390
pF
pF
pF
114 ns
994 ns
618 ns
720 ns
191 nC
-- nC
-- nC
105 A
420 A
1.4 V
-- ns
-- µC
FQH90N10V2 Rev. A
2
www.fairchildsemi.com

विन्यास 8 पेज
डाउनलोड[ FQH90N10V2 Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
FQH90N10V2MOSFETFairchild Semiconductor
Fairchild Semiconductor
FQH90N10V2100V N-Channel MOSFETFairchild Semiconductor
Fairchild Semiconductor


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English