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FQH70N10 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - MOSFET - Fairchild Semiconductor

भाग संख्या FQH70N10
समारोह MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=FQH70N10?> डेटा पत्रक पीडीएफ

FQH70N10 pdf
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 100 V, VGS = 0 V
VDS = 80 V, TC = 150°C
VGS = 25 V, VDS = 0 V
VGS = -25 V, VDS = 0 V
100
--
--
--
--
--
--
0.1
--
--
--
--
--
--
1
10
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
2.0 --
4.0
VGS = 10 V, ID = 35 A
-- 0.019 0.023
VDS = 40 V, ID = 35 A
(Note 4) --
48
--
V
S
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 2500 3300
-- 720 940
-- 150 200
pF
pF
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 50 V, ID = 70 A,
RG = 25
-- 30
70
-- 470 950
-- 130 270
(Note 4, 5)
--
160
330
VDS = 80 V, ID = 70 A,
-- 85 110
VGS = 10 V
-- 16
--
(Note 4, 5) --
42
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
-- -- 70
ISM Maximum Pulsed Drain-Source Diode Forward Current
-- -- 280
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 70 A
-- -- 1.5
trr Reverse Recovery Time
VGS = 0 V, IS = 70 A,
-- 110
--
Qrr Reverse Recovery Charge
dIF / dt = 100 A/µs
(Note 4) --
430
--
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 0.4mH, IAS = 70A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 70A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
A
A
V
ns
nC
©2003 Fairchild Semiconductor Corporation
Rev. A, December 2003

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