DataSheet.in

FQH44N10_F133 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - MOSFET - Fairchild Semiconductor

भाग संख्या FQH44N10_F133
समारोह MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=FQH44N10_F133?> डेटा पत्रक पीडीएफ

FQH44N10_F133 pdf
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250 μA
ID = 250 μA, Referenced to 25°C
VDS = 100 V, VGS = 0 V
VDS = 80 V, TC = 150°C
VGS = 25 V, VDS = 0 V
VGS = -25 V, VDS = 0 V
100
--
--
--
--
--
--
0.1
--
--
--
--
--
--
1
10
100
-100
V
V/°C
μA
μA
nA
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 μA
VGS = 10 V, ID = 24 A
VDS = 40 V, ID = 24 A
(Note 4)
2.0
--
--
--
0.03
31
4.0
0.039
--
V
Ω
S
Dynamic Characteristics
Ciss
Coss
Input Capacitance
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 1400 1800
-- 425 550
-- 85 110
pF
pF
pF
Switching Characteristics
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 50 V, ID = 43.5 A,
RG = 25 Ω
-- 19
45
-- 190 390
-- 90 190
(Note 4, 5)
--
100
210
VDS = 80 V, ID = 43.5 A,
VGS = 10 V
(Note 4, 5)
--
--
--
48
9.0
24
62
--
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
-- -- 48
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 48 A
-- -- 192
-- -- 1.5
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 43.5 A,
dIF / dt = 100 A/μs
(Note 4)
--
--
98
360
--
--
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 0.345mH, IAS = 48A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 43.5A, di/dt 300A/μs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300μs, Duty cycle 2%
5. Essentially independent of operating temperature
A
A
V
ns
nC
©2008 Fairchild Semiconductor Corporation
2
Rev. A, October 2008

विन्यास 8 पेज
डाउनलोड[ FQH44N10_F133 Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
FQH44N10_F133MOSFETFairchild Semiconductor
Fairchild Semiconductor


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English