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FQH44N10 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - MOSFET - Fairchild Semiconductor

भाग संख्या FQH44N10
समारोह MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=FQH44N10?> डेटा पत्रक पीडीएफ

FQH44N10 pdf
Package Marking and Ordering Information
Part Number
FQH44N10_F133
Top Mark
FQH44N10
Package
TO-247
Packing Method Reel Size
Tube
N/A
Tape Width
N/A
Quantity
30 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Off Characteristics
Test Conditions
Min Typ Max
BVDSS Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 A
100 --
--
BVDSS Breakdown Voltage Temperature
/ TJ Coefficient
ID = 250 A, Referenced to 25°C --
0.1
--
IDSS Zero Gate Voltage Drain Current
VDS = 100 V, VGS = 0 V
VDS = 80 V, TC = 150°C
-- --
1
-- -- 10
IGSSF
Gate-Body Leakage Current, Forward VGS = 25 V, VDS = 0 V
-- -- 100
IGSSR
Gate-Body Leakage Current, Reverse VGS = -25 V, VDS = 0 V
-- -- -100
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250 A
VGS = 10 V, ID = 24 A
2.0 --
4.0
-- 0.03 0.039
gFS Forward Transconductance
Dynamic Characteristics
VDS = 40 V, ID = 24 A
-- 31
--
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 1400 1800
-- 425 550
-- 85 110
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 50 V, ID = 43.5 A,
RG = 25
-- 19
45
-- 190 390
-- 90 190
(Note 4)
--
100
210
VDS = 80 V, ID = 43.5 A,
-- 48
62
VGS = 10 V
-- 9.0
--
(Note 4) --
24
--
Unit
V
V/°C
A
A
nA
nA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 48 A
trr Reverse Recovery Time
VGS = 0 V, IS = 43.5 A,
Qrr Reverse Recovery Charge
dIF / dt = 100 A/s

1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 0.345 mH, IAS = 48 A, VDD = 25 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD 43.5 A, di/dt 300 A/µs, VDD BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature.
-- --
48
-- -- 192
-- -- 1.5
-- 98
--
-- 360
--
A
A
V
ns
nC
©2008 Fairchild Semiconductor Corporation
FQH44N10 Rev. C1
2
www.fairchildsemi.com

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डाउनलोड[ FQH44N10 Datasheet.PDF ]


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