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FQH8N100C डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - MOSFET - Fairchild Semiconductor

भाग संख्या FQH8N100C
समारोह MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=FQH8N100C?> डेटा पत्रक पीडीएफ

FQH8N100C pdf
Package Marking and Ordering Information
Part Number
FQH8N100C
Top Mark
FQH8N100C
Package
TO-247
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
30 units
Electrical Characteristics TC = 25°C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
BVDSS
/TJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current, Forward
IGSSR
Gate-Body Leakage Current, Reverse
On Characteristics
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 1000 V, VGS = 0 V
VDS = 800 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
VGS(th)
Gate Threshold Voltage
RDS(on)
Static Drain-Source On-Resistance
gFS Forward Transconductance
Dynamic Characteristics
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 4.0A
VDS = 50 V, ID = 4.0 A
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
VDD = 500 V, ID = 8.0A,
RG = 25
td(off)
tf
Turn-Off Delay Time
Turn-Off Fall Time
(Note 4)
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 800 V, ID = 8.0A,
VGS = 10 V
(Note 4)
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 8.0 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 8.0 A,
dIF / dt = 100 A/µs
1000
--
--
--
--
--
3.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Typ.
--
1.4
--
--
--
--
--
1.2
8.0
2475
195
16
50
95
122
80
53
13
23
--
--
--
620
5.2
Max.
--
--
10
100
100
-100
5.0
1.45
--
3220
255
21
110
200
254
170
70
--
--
8.0
32.0
1.4
--
--
Unit
V
V/°C
µA
µA
nA
nA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
A
V
ns
µC
Notes:
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 25 mH, IAS = 8.0 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD 8.0 A, di/dt 200 A/µs, VDD BVDSS, Starting TJ = 25°C.
4. Essentially independent of operating temperature.
©2008 Fairchild Semiconductor Corporation
FQH8N100C Rev C0
2
www.fairchildsemi.com

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