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SUT483J डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - NPN/PNP Epitaxial Planar Silicon Transistor - AUK

भाग संख्या SUT483J
समारोह NPN/PNP Epitaxial Planar Silicon Transistor
मैन्युफैक्चरर्स AUK 
लोगो AUK लोगो 
पूर्व दर्शन
1 Page
		
<?=SUT483J?> डेटा पत्रक पीडीएफ

SUT483J pdf
Absolute maximum ratings (Tr1, Tr2)
Characteristic
Symbol
Collector-Base voltage
Collector-Emitter voltage
Emitter-base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Ratings
Tr1 Tr2
60 -50
50 -50
5 -5
150 -150
150
150
-55~150
SUT483J
Ta=25°C
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics (Tr1 : NPN)
Characteristic
Symbol
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-Emitter saturation voltage
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE(sat)
Transition frequency
fT
Collector output capacitance
Cob
Test Condition
IC=100µA, IE=0
IC=1mA, IB=0
IE=10µA, IC=0
VCB=60V, IE=0
VEB=5V, IC=0
VCE=6V, IC=2mA
IC=100mA, IB=10mA
VCE=10V, IC=1mA,
f=100MHz
VCB=10V, IE=0, f=1MHz
Ta=25°C
Min. Typ. Max. Unit
60 - - V
50 - - V
5- - V
- - 0.1 µA
- - 0.1 µA
70 - 700 -
- - 0.25 V
80 -
- MHz
- 2 3.5 pF
Electrical Characteristics (Tr2 : PNP)
Characteristic
Symbol
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-Emitter saturation voltage
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE(sat)
Transition frequency
fT
Collector output capacitance
Cob
Test Condition
IC=-100µA, IE=0
IC=-1mA, IB=0
IE=-10µA, IC=0
VCB=-50V, IE=0
VEB=-5V, IC=0
VCE=-6V, IC=-2mA
IC=-100mA, IB=-10mA
VCE=-10V, IC=-1mA,
f=100MHz
VCB=-10V, IE=0, f=1MHz
Ta=25°C
Min. Typ. Max. Unit
-50 - - V
-50 - - V
-5 - - V
- - -0.1 µA
- - -0.1 µA
120 - 400 -
- - -0.3 V
80 -
- MHz
- 4 7 pF
KST-6001-004
2

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डाउनलोड[ SUT483J Datasheet.PDF ]


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