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FDMB2308PZ डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - MOSFET - Fairchild Semiconductor

भाग संख्या FDMB2308PZ
समारोह MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=FDMB2308PZ?> डेटा पत्रक पीडीएफ

FDMB2308PZ pdf
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
IS1S2
IGSS
Zero Gate Voltage Source1 to Source2
Current
Gate to Source Leakage Current
VS1S2 = -16 V, VGS = 0 V
VGS = ±12 V, VS1S2 = 0 V
-1 μA
±10 μA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
rS1S2(on)
Static Source1 to Source2 On Resistance
gFS Forward Transconductance
VGS = VS1S2, IS1S2 = -250 μA
VGS = -4.5 V, IS1S2 = -5.7 A
VGS = -2.5 V, IS1S2 = -4.6 A
VGS = -4.5 V, IS1S2 = -5.7 A ,
TJ = 125 °C
VS1S2 = -5 V, IS1S2 = -5.7 A
-0.6 -0.9 -1.5
V
27 36
36 50 mΩ
35 49
29 S
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VS1S2 = -10 V, VGS = 0 V,
f = 1 MHz
2280
361
339
3030
540
510
pF
pF
pF
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate1 to Source1 Charge
Gate1 to Source2 “Miller” Charge
VS1S2 = -10 V, IS1S2 = -5.7 A
VGS = -4.5 V, RGEN = 6 Ω
VS1S2 = -10 V, IS1S2 = -5.7 A,
VG1S1 = -4.5 V, VG2S2 = 0 V
14 25 ns
33 52 ns
74 118 ns
58 93 ns
22 30 nC
3.6 nC
7.7 nC
Source1- Source2 Diode Characteristics
Ifss Maximum Continuous Source1-Source2 Diode Forward Current
Vfss
Source1 to Source2 Diode Forward Voltage
VG1S 1= 0 V, VG2S2= -4.5 V,
Ifss= -5.7 A
(Note 2)
-5.7 A
-1 -1.6 V
NOTES:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 57 °C/W when mounted on
a 1 in2 pad of 2 oz copper
b. 161 °C/W when mounted on
a minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
©2013 Fairchild Semiconductor Corporation
FDMB2308PZ Rev.C3
2
www.fairchildsemi.com

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भाग संख्याविवरणविनिर्माण
FDMB2308PZMOSFETFairchild Semiconductor
Fairchild Semiconductor


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