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FDMC8010ET30 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - MOSFET - Fairchild Semiconductor

भाग संख्या FDMC8010ET30
समारोह MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=FDMC8010ET30?> डेटा पत्रक पीडीएफ

FDMC8010ET30 pdf
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 1 mA, VGS = 0 V
30
V
ID = 1 mA, referenced to 25 °C
15 mV/°C
VDS = 24 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
1 μA
100 nA
On Characteristics
VGS(th)
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 1 mA
1.2 1.5 2.5
V
ID = 1 mA, referenced to 25 °C
-5 mV/°C
VGS = 10 V, ID = 30 A
VGS = 4.5 V, ID = 25 A
VGS = 10 V, ID = 30A, TJ = 125 °C
VDS = 5 V, ID = 30 A
0.9 1.3
1.3 1.8 mΩ
1.3 2
188 S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 15 V, VGS = 0 V,
f = 1 MHz
4405 5860
pF
1570 2090
pF
167 250
pF
0.1 0.5 1.25 Ω
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VDD = 15 V, ID = 30 A,
VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V
VGS = 0 V to 4.5 V VDD = 15 V,
ID = 30 A
15 27 ns
7.5 15 ns
40 64 ns
5.3 11 ns
67 94 nC
32 45 nC
10 nC
9.5 nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, IS = 2 A
VGS = 0 V, IS = 30 A
(Note 2)
(Note 2)
0.6 1.2
0.7 1.2
V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 30 A, di/dt = 100 A/μs
49 78 ns
29 46 nC
Notes:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθCA is determined by the user's board design.
a. 53 °C/W when mounted on a
1 in2 pad of 2 oz copper.
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.
3. EAS of 153 mJ is based on starting TJ = 25 °C, L = 0.3 mH, IAS = 32 A, VDD = 27 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 47 A.
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
5. Pulsed Id please refer to Fig 11 SOA graph for more details.
6.Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro-mechanical application board design.
©2015 Fairchild Semiconductor Corporation
FDMC8010ET30 Rev. 1.0
2
www.fairchildsemi.com

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