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FDMC7572S डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - MOSFET - Fairchild Semiconductor

भाग संख्या FDMC7572S
समारोह MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=FDMC7572S?> डेटा पत्रक पीडीएफ

FDMC7572S pdf
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
ID = 1 mA, VGS = 0 V
ID = 10 mA, referenced to 25 °C
Zero Gate Voltage Drain Current
VDS = 20 V, VGS = 0 V
Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V
25 V
21 mV/°C
500 μA
100 nA
On Characteristics
VGS(th)
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 1 mA
ID = 10 mA, referenced to 25 °C
VGS = 10 V, ID = 22.5 A
VGS = 4.5 V, ID = 18 A
VGS = 10 V, ID = 22.5 A, TJ = 125 °C
VDS = 5 V, ID = 22.5 A
1.2
1.7 3.0
V
-5 mV/°C
2.5 3.15
3.6 4.7 mΩ
3.5 4.5
122 S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 13 V, VGS = 0 V,
f = 1 MHz
2031
596
134
1.1
2705
795
205
2.4
pF
pF
pF
Ω
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDD = 13 V, ID = 22.5 A,
VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V
VGS = 0 V to 4.5 V
VDD = 13 V
ID = 22.5 A
11 22 ns
3.6 10 ns
26 41 ns
3 10 ns
31 44 nC
14 20 nC
6.5 nC
3.9 nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage VGS = 0 V, IS = 22.5 A
VGS = 0 V, IS = 2 A
(Note 2)
(Note 2)
0.79 1.2
0.47 0.8
V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 22.5 A, di/dt = 300 A/μs
24 39 ns
19 34 nC
NOTES:
1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
53 °C/W when mounted on a
1 in2 pad of 2 oz copper
125 °C/W when mounted on
a minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.
3. EAS of 84 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 13 A, VDD = 23 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 20 A.
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
FDMC7572S Rev.C1
2
www.fairchildsemi.com

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