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FDMC7582 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - MOSFET - Fairchild Semiconductor

भाग संख्या FDMC7582
समारोह MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=FDMC7582?> डेटा पत्रक पीडीएफ

FDMC7582 pdf
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA , VGS = 0 V
25
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 μA , referenced to 25 °C
19 mV/°C
IDSS Zero Gate Voltage Drain Current
VDS = 20 V, VGS = 0 V
1 μA
IGSS
Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V
100 nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
1.2 1.7 2.5 V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 μA , referenced to 25 °C
-5 mV/°C
VGS = 10 V, ID = 16.7 A
4.0 5.0
rDS(on)
Static Drain to Source On Resistance
VGS = 4.5 V, ID = 13.6 A
6.0 7.5 mΩ
VGS = 10 V, ID = 16.7 A,TJ = 125 °C
5.4 7.0
gFS Forward Transconductance
VDD = 5 V, ID = 16.7 A
58 S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 13 V, VGS = 0 V,
f = 1 MHz
1348 1795 pF
372 495 pF
79 120 pF
0.1 0.9 2.9 Ω
Switching Characteristics
td(on)
tr
td(off)
tf
Qg(TOT)
Qg(TOT)
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge at 10V
Total Gate Charge at 4.5V
Total Gate Charge
Gate to Drain “Miller” Charge
VDD = 13 V, ID = 16.7A,
VGS = 10 V, RGEN = 6 Ω
VDD = 13 V, ID = 16.7 A
8.8 18 ns
2 10 ns
20 36 ns
1.6 10 ns
20 28 nC
9.5 13 nC
3.9 nC
2.5 nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, IS = 16.7 A
VGS = 0 V, IS = 2 A
(Note 2)
(Note 2)
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 16.7 A, di/dt = 100 A/μs
0.8 1.3 V
0.7 1.2
22 39 ns
7 14 nC
Notes:
1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 53 °C/W when mounted on a
1 in2 pad of 2 oz copper
b. 125 °C/W when mounted on
a minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied.
4. EAS of 38 mJ is based on starting TJ = 25 oC; N-ch: L = 0.3 mH, IAS = 16 A, VDD = 23 V, VGS = 10 V.
©2012 Fairchild Semiconductor Corporation
FDMC7582 Rev.C6
2
www.fairchildsemi.com

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