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CJP02N80 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel MOSFET - JCET

भाग संख्या CJP02N80
समारोह N-Channel MOSFET
मैन्युफैक्चरर्स JCET 
लोगो JCET लोगो 
पूर्व दर्शन
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<?=CJP02N80?> डेटा पत्रक पीडीएफ

CJP02N80 pdf
MOSFET ELECTRICAL CHARACTERISTICS
Ta=25 unless otherwise specified
Parameter
Symbol
Test Condition
Min Typ Max Unit
Off characteristics
Drain-source breakdown voltage
V(BR)DSS VGS = 0V, ID =250µA
800
V
Zero gate voltage drain current
Gate-body leakage current
IDSS VDS =800V, VGS =0V
IGSS VDS =0V, VGS 30V
10
±100
µA
nA
On characteristics
Gate-threshold voltage
Static drain-source on-resistance
Forward transconductance (note2)
VGS(th)
RDS(on)
gfs
VDS =VGS, ID =250µA
VGS =10V, ID =1.2A
VDS =50V, ID =1.2A
3 45
4.5 6.3
1.5 2.65
V
S
Dynamic characteristics (note 3)
Input capacitance
Output capacitance
Reverse transfer capacitance
Ciss
Coss
Crss
VDS =25V,VGS =0V,f =1MHz
550
60 pF
7
Switching characteristics (note 2,3)
Turn-on delay time
Turn-on rise time
Turn-off delay time
td(on)
tr
td(off)
VDD=400V, RG=25, ID =2.4A
35
70
ns
60
Turn-off fall time
tf
65
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs VDS =640V,VGS =10V,ID =2.4A
Qgd
15 nC
2.6 nC
6 nC
Drain-Source Diode Characteristics
Drain-source diode forward voltage
VSD VGS = 0V, IS =2.4A
1.4 V
Continuous drain-source diode forward
current
IS
2.4 A
Pulsed drain-source diode forward current
ISM
9.6 A
Notes :
1. IL=2.4A, VDD=50V, RG=25,Starting TJ=25.
2. Pulse Test : Pulse width300µs, duty cycle 2%.
3. Guaranteed by design, not subject to production
www.cj-elec.com
2
B,Apr,2016

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डाउनलोड[ CJP02N80 Datasheet.PDF ]


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