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CJLJF3117P डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-Channel MOSFET - JCET

भाग संख्या CJLJF3117P
समारोह P-Channel MOSFET
मैन्युफैक्चरर्स JCET 
लोगो JCET लोगो 
पूर्व दर्शन
1 Page
		
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CJLJF3117P pdf
MOSFET ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise noted)
Parameter
Symbol
Test Condition
Min Typ Max Unit
On/Off Characteristics
Drain-source breakdown voltage
V(BR)DSS VGS = 0V, ID =-250µA
Gate-threshold voltage
VGS(th) VDS =VGS, ID =-250µA
Gate-body leakage current
IGSS VDS =0V, VGS =±8V
Zero gate voltage drain current
IDSS VDS =-16V, VGS =0V
VGS =-4.5V, ID =-2.0A
Drain-source on-state resistance (note 1)
RDS(on) VGS=-2.5V, ID =-2.0A
VGS =-1.8V, ID =-1.6A
Forward transconductance (note 1)
gFS VDS =-5V, ID =-2A
Charges , Capacitances and Gate resistance (note2)
Input capacitance
Ciss
Output capacitance
Coss VDS =-10V,VGS =0V,f =1MHz
Reverse transfer capacitance
Crss
Total gate charge
Qg
Gate-source charge
Gate-drain charge
Qgs VDS =-10V,VGS =-4.5V,ID =-2A
Qgd
Gate Resistance
Rg
-20
-0.4
2.5
-1
±100
-1
100
135
250
V
nA
µA
m
S
531
91 pF
56
5.5 6.2
1.0 nC
1.4
8.8
Switching times (note2)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
td(on)
tr
td(off)
tf
VDD=-5V, ID=-1A,
VGS=-4.5V,RG=6
5.2
13.2
ns
13.7
19.1
Source-drain diode characteristics
Forward on voltage (note1)
VSD VGS =0V, IS=-1A
Notes: 1. Pulse Test : Pulse width 300µs, duty cycle 2%.
2. These parameters have no way to verify.
-1 V
SCHOTTKY DIODE MAXIMUM RATINGS (Ta=25unless otherwise noted)
Parameter
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
DC blocking voltage
VRRM
VR
30
30
V
Average rectified forward current
IF 2 A
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise noted)
Parameter
Symbol
Test Condition
Min Typ
Forward voltage
Reverse current
Total capacitance
IF =0.1A
VF
IF =1A
VR =30V
IR VR =20V
VR =10V
Ctot VR =5V,f=1MHz
30
Max
0.39
0.55
20
8
4.5
Unit
V
µA
pF
B,Nov,2012

विन्यास 4 पेज
डाउनलोड[ CJLJF3117P Datasheet.PDF ]


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