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CJK2333 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-Channel MOSFET - JCET

भाग संख्या CJK2333
समारोह P-Channel MOSFET
मैन्युफैक्चरर्स JCET 
लोगो JCET लोगो 
पूर्व दर्शन
1 Page
		
<?=CJK2333?> डेटा पत्रक पीडीएफ

CJK2333 pdf
026)(7(/(&75,&$/&+$5$&7(5,67,&6
Ta=25 Я unless otherwise specified
Parameter
Symbol
Test Condition
Static Characteristics
Drain-source breakdown voltage
V(BR)DSS VGS = 0V, ID =-250µA
Zero gate voltage drain current
IDSS VDS =-12V,VGS = 0V
Gate-body leakage current
IGSS VGS =±8V, VDS = 0V
Gate threshold voltage (note 1)
VGS(th)
VDS =VGS, ID =-250µA
VGS =-4.5V, ID =-5A
Drain-source on-resistance (note 1)
RDS(on)
VGS =-3.7V, ID =-4.6A
VGS =-2.5V, ID =-4.3A
VGS =-1.8V, ID =-1A
VGS =-1.5V, ID =-0.5A
Forward tranconductance (note 1)
gFS VDS =-5V, ID =-5A
Dynamic characteristics (note 2)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on delay time
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
td(on)
VDS =-6V,VGS =0V,f =1MHz
f =1MHz
VDS =-6V,VGS =-4.5V,ID=-5A
Turn-on rise time
Turn-off delay time
Turn-off fall time
tr
td(off)
tf
VDD=-6V,VGEN=-4.5V,ID=-4A
RL=6,RGEN=1
Source-Drain Diode characteristics
Diode forward current
IS TC=25
Diode pulsed forward current
ISM
Diode Forward voltage (note 1)
VDS VGS =0V, IS=-4A
Diode reverse recovery time (note 2)
Diode reverse recovery charge (note 2)
trr
Qrr
IF=-4A,dI/dt=100A/µs
Notes : 1. Pulse test; pulse width300μs, duty cycle2%.
2. Guaranteed by design, not subject to production testing.
Min Typ Max Unit
-12 V
-1 µA
±0.1 µA
-0.4 -1 V
28
32
40 m
63
150
18 S
1275
255
236
1.9 19
14 21
2.3
3.6
26 40
24 40
45 70
20 35
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
-1.4 A
-20 A
-1.2 V
24 48 ns
8 16 nC
ZZZFMHOHFFRP
 BMay5

विन्यास 5 पेज
डाउनलोड[ CJK2333 Datasheet.PDF ]


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