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APTM100A23STG डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - MOSFET Power Module - Microsemi

भाग संख्या APTM100A23STG
समारोह MOSFET Power Module
मैन्युफैक्चरर्स Microsemi 
लोगो Microsemi लोगो 
पूर्व दर्शन
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<?=APTM100A23STG?> डेटा पत्रक पीडीएफ

APTM100A23STG pdf
APTM100A23STG
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ
IDSS
RDS(on)
VGS(th)
IGSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
VGS = 0V,VDS= 1000V Tj = 25°C
VGS = 0V,VDS= 800V Tj = 125°C
VGS = 10V, ID = 18A
230
VGS = VDS, ID = 5mA
VGS = ±30 V, VDS = 0V
3
Max
200
1000
270
5
±150
Unit
µA
m
V
nA
Dynamic Characteristics
Symbol Characteristic
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Qg Total gate Charge
Qgs Gate – Source Charge
Qgd Gate – Drain Charge
Td(on)
Tr
Td(off)
Tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Eon Turn-on Switching Energy
Eoff Turn-off Switching Energy
Eon Turn-on Switching Energy
Eoff Turn-off Switching Energy
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
VGS = 10V
VBus = 500V
ID = 36A
Inductive switching @ 125°C
VGS = 15V
VBus = 667V
ID = 36A
RG = 2.5
Inductive switching @ 25°C
VGS = 15V, VBus = 667V
ID = 36A, RG = 2.5
Inductive switching @ 125°C
VGS = 15V, VBus = 667V
ID = 36A, RG = 2.5
Min Typ Max Unit
8700
1430
240
pF
308
52 nC
194
10
12
ns
121
35
1278
760
µJ
2092
902
µJ
Series diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
IRM
IF
VF
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
VR=200V
DC Forward Current
Diode Forward Voltage
IF = 60A
IF = 120A
IF = 60A
200 V
Tj = 25°C
Tj = 125°C
350
600
µA
Tc = 85°C
60
A
1.1 1.15
1.4 V
Tj = 125°C
0.9
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 60A
VR = 133V
di/dt = 400A/µs
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
24
48
66
300
ns
nC
www.microsemi.com
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