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APTM100A13DG डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - MOSFET Power Module - Microsemi

भाग संख्या APTM100A13DG
समारोह MOSFET Power Module
मैन्युफैक्चरर्स Microsemi 
लोगो Microsemi लोगो 
पूर्व दर्शन
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<?=APTM100A13DG?> डेटा पत्रक पीडीएफ

APTM100A13DG pdf
APTM100A13DG
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ
IDSS
RDS(on)
VGS(th)
IGSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
VGS = 0V,VDS= 1000V Tj = 25°C
VGS = 0V,VDS= 800V Tj = 125°C
VGS = 10V, ID = 32.5A
130
VGS = VDS, ID = 6mA
3
VGS = ±30 V, VDS = 0V
Max
600
2
156
5
±450
Unit
µA
mA
m
V
nA
Dynamic Characteristics
Symbol Characteristic
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Qg Total gate Charge
Qgs Gate – Source Charge
Qgd Gate – Drain Charge
Td(on)
Tr
Td(off)
Tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Eon Turn-on Switching Energy
Eoff Turn-off Switching Energy
Eon Turn-on Switching Energy
Eoff Turn-off Switching Energy
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
VGS = 10V
VBus = 500V
ID = 65A
Inductive switching @ 125°C
VGS = 15V
VBus = 667V
ID = 65A
RG = 0.5
Inductive switching @ 25°C
VGS = 15V, VBus = 667V
ID = 65A, RG = 0.5
Inductive switching @ 125°C
VGS = 15V, VBus = 667V
ID = 65A, RG = 0.5
Min Typ Max Unit
15.2
2.6 nF
0.42
562
75 nC
363
9
9
50
ns
24
2.13
mJ
0.46
4.4
mJ
0.57
Series diode ratings and characteristics
Symbol Characteristic
Test Conditions
VRRM Maximum Repetitive Reverse Voltage
IRM Maximum Reverse Leakage Current VR=1200V
IF DC Forward Current
VF Diode Forward Voltage
IF = 120A
IF = 240A
IF = 120A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 120A
VR = 800V
di/dt = 400A/µs
Min Typ Max Unit
1200
V
Tj = 25°C
Tj = 125°C
Tc = 100°C
Tj = 125°C
150
600
µA
120 A
2.5 3
3V
1.8
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
265
350
1120
5800
ns
nC
www.microsemi.com
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डाउनलोड[ APTM100A13DG Datasheet.PDF ]


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