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APTM100H45SCTG डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - MOSFET Power Module - Microsemi

भाग संख्या APTM100H45SCTG
समारोह MOSFET Power Module
मैन्युफैक्चरर्स Microsemi 
लोगो Microsemi लोगो 
पूर्व दर्शन
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<?=APTM100H45SCTG?> डेटा पत्रक पीडीएफ

APTM100H45SCTG pdf
APTM100H45SCTG
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
IDSS Zero Gate Voltage Drain Current
RDS(on)
VGS(th)
IGSS
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
Min Typ Max Unit
VGS = 0V,VDS= 1000V
VGS = 0V,VDS= 800V
Tj = 25°C
Tj = 125°C
100
500
µA
VGS = 10V, ID = 9A
450 540 m
VGS = VDS, ID = 2.5mA
3 5V
VGS = ±30 V, VDS = 0V
±100 nA
Dynamic Characteristics
Symbol Characteristic
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Qg Total gate Charge
Qgs Gate – Source Charge
Qgd Gate – Drain Charge
Td(on)
Tr
Td(off)
Tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Eon Turn-on Switching Energy
Eoff Turn-off Switching Energy
Eon Turn-on Switching Energy
Eoff Turn-off Switching Energy
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
VGS = 10V
VBus = 500V
ID = 18A
Inductive switching @ 125°C
VGS = 15V
VBus = 667V
ID = 18A
RG = 5
Inductive switching @ 25°C
VGS = 15V, VBus = 667V
ID = 18A, RG = 5
Inductive switching @ 125°C
VGS = 15V, VBus = 667V
ID = 18A, RG = 5
Min Typ Max Unit
4350
715
120
pF
154
26 nC
97
10
12 ns
121
35
383
µJ
380
627
µJ
451
Series diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
IRM
IF
VF
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
VR=200V
DC Forward Current
Diode Forward Voltage
IF = 30A
IF = 60A
IF = 30A
200 V
Tj = 25°C
Tj = 125°C
250
500
µA
Tc = 85°C
30
A
1.1 1.15
1.4 V
Tj = 125°C
0.9
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 30A
VR = 133V
di/dt = 200A/µs
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
24
48
33
150
ns
nC
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