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APTM100H80FT1G डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - MOSFET Power Module - Microsemi

भाग संख्या APTM100H80FT1G
समारोह MOSFET Power Module
मैन्युफैक्चरर्स Microsemi 
लोगो Microsemi लोगो 
पूर्व दर्शन
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<?=APTM100H80FT1G?> डेटा पत्रक पीडीएफ

APTM100H80FT1G pdf
APTM100H80FT1G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ
IDSS Zero Gate Voltage Drain Current
VDS = 1000V
VGS = 0V
Tj = 25°C
Tj = 125°C
RDS(on) Drain – Source on Resistance
VGS = 10V, ID = 9A
800
VGS(th) Gate Threshold Voltage
IGSS Gate – Source Leakage Current
VGS = VDS, ID = 1mA
VGS = ±30 V
34
Max
250
1000
960
5
±100
Unit
µA
mΩ
V
nA
Dynamic Characteristics
Symbol Characteristic
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Qg Total gate Charge
Qgs Gate – Source Charge
Qgd Gate – Drain Charge
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
VGS = 10V
VBus = 500V
ID = 9A
Resistive switching @ 25°C
VGS = 15V
VBus = 667V
ID = 9A
RG = 4.7Ω
Min Typ Max Unit
3876
405 pF
52
150
26 nC
70
29
31
ns
105
28
Source - Drain diode ratings and characteristics
Symbol Characteristic
Test Conditions
IS Continuous Source current
(Body diode)
VSD Diode Forward Voltage
dv/dt Peak Diode Recovery X
VGS = 0V, IS = - 9A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = - 9A
VR = 100V
diS/dt = 100A/µs
Tc = 25°C
Tc = 80°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
X dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS - 9A di/dt 1000A/µs VDD 400V Tj 125°C
Min Typ Max Unit
11
8
A
1V
25 V/ns
245
ns
465
1.02
µC
2.57
www.microsemi.com
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