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APTM100SKM90G डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - MOSFET Power Module - Microsemi

भाग संख्या APTM100SKM90G
समारोह MOSFET Power Module
मैन्युफैक्चरर्स Microsemi 
लोगो Microsemi लोगो 
पूर्व दर्शन
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<?=APTM100SKM90G?> डेटा पत्रक पीडीएफ

APTM100SKM90G pdf
APTM100SKM90G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ
IDSS
RDS(on)
VGS(th)
IGSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
VGS = 0V,VDS = 1000V Tj = 25°C
VGS = 0V,VDS = 800V Tj = 125°C
VGS = 10V, ID = 39A
VGS = VDS, ID = 10mA
VGS = ±30 V, VDS = 0V
3
90
Max
400
2000
105
5
±250
Unit
µA
m
V
nA
Dynamic Characteristics
Symbol Characteristic
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Qg Total gate Charge
Qgs Gate – Source Charge
Qgd Gate – Drain Charge
Td(on)
Tr
Td(off)
Tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Eon Turn-on Switching Energy
Eoff Turn-off Switching Energy
Eon Turn-on Switching Energy
Eoff Turn-off Switching Energy
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
VGS = 10V
VBus = 500V
ID = 78A
Inductive switching @ 125°C
VGS = 15V
VBus = 670V
ID = 78A
RG =1.2
Inductive switching @ 25°C
VGS = 15V, VBus = 670V
ID = 78A, RG = 1.2
Inductive switching @ 125°C
VGS = 15V, VBus = 670V
ID = 78A, RG = 1.2
Min Typ Max Unit
20.7
3.5 nF
0.64
744
96 nC
488
18
12 ns
155
40
3.6
mJ
2.5
5.7
mJ
3.1
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
IRM
IF
VF
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
VR=1000V
DC Forward Current
Diode Forward Voltage
IF = 100A
IF = 200A
IF = 100A
1000
V
Tj = 25°C
Tj = 125°C
250
500
µA
Tc = 70°C
100
1.9 2.5
A
2.2 V
Tj = 125°C
1.7
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 100A
VR = 670V
di/dt = 200A/µs
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
300
360
800
4050
ns
nC
www.microsemi.com
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डाउनलोड[ APTM100SKM90G Datasheet.PDF ]


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