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APTM100SK33T1G डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - MOSFET Power Module - Microsemi

भाग संख्या APTM100SK33T1G
समारोह MOSFET Power Module
मैन्युफैक्चरर्स Microsemi 
लोगो Microsemi लोगो 
पूर्व दर्शन
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<?=APTM100SK33T1G?> डेटा पत्रक पीडीएफ

APTM100SK33T1G pdf
APTM100SK33T1G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ
IDSS Zero Gate Voltage Drain Current
VDS =1000V
VGS = 0V
Tj = 25°C
Tj = 125°C
RDS(on) Drain – Source on Resistance
VGS = 10V, ID = 18A
330
VGS(th) Gate Threshold Voltage
IGSS Gate – Source Leakage Current
VGS = VDS, ID = 2.5mA
VGS = ±30 V
34
Max
100
500
396
5
±100
Unit
µA
mΩ
V
nA
Dynamic Characteristics
Symbol Characteristic
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Qg Total gate Charge
Qgs Gate – Source Charge
Qgd Gate – Drain Charge
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
VGS = 10V
VBus = 500V
ID = 18A
Resistive switching @ 25°C
VGS = 15V
VBus = 667V
ID = 18A
RG = 2.2Ω
Min Typ Max Unit
7868
825 pF
104
305
55 nC
145
44
40
ns
150
38
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
IRM
IF
VF
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
DC Forward Current
Diode Forward Voltage
VR=1200V
IF = 30A
IF = 60A
IF = 30A
1200
V
Tj = 25°C
Tj = 125°C
100
500
µA
Tc = 80°C
30
A
2.6 3.1
3.2 V
Tj = 125°C
1.8
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 30A
VR = 800V
di/dt =200A/µs
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
300
380
360
1700
ns
nC
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
RthJC Junction to Case Thermal Resistance
Transistor
Diode
0.32 °C/W
1.2
VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
TJ Operating junction temperature range
2500
-40
V
150
TSTG Storage Temperature Range
TC Operating Case Temperature
Torque Mounting torque
To heatsink
-40
-40
M4 2.5
125 °C
100
4.7 N.m
Wt Package Weight
80 g
www.microsemi.com
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डाउनलोड[ APTM100SK33T1G Datasheet.PDF ]


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