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APTM100SK18TG डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - MOSFET Power Module - Microsemi

भाग संख्या APTM100SK18TG
समारोह MOSFET Power Module
मैन्युफैक्चरर्स Microsemi 
लोगो Microsemi लोगो 
पूर्व दर्शन
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<?=APTM100SK18TG?> डेटा पत्रक पीडीएफ

APTM100SK18TG pdf
APTM100SK18TG
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
IDSS Zero Gate Voltage Drain Current
RDS(on)
VGS(th)
IGSS
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
Min Typ Max Unit
VGS = 0V,VDS = 1000V Tj = 25°C
VGS = 0V,VDS = 800V Tj = 125°C
VGS = 10V, ID = 21.5A
VGS = VDS, ID = 5mA
VGS = ±30 V, VDS = 0V
3
200
1000
µA
180 210 m
5V
±150 nA
Dynamic Characteristics
Symbol Characteristic
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Qg Total gate Charge
Qgs Gate – Source Charge
Qgd Gate – Drain Charge
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Eon Turn-on Switching Energy
Eoff Turn-off Switching Energy
Eon Turn-on Switching Energy
Eoff Turn-off Switching Energy
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
VGS = 10V
VBus = 500V
ID = 43A
Inductive switching @ 125°C
VGS = 15V
VBus = 670V
ID = 43A
RG = 2.5
Inductive switching @ 25°C
VGS = 15V, VBus = 670V
ID = 43A, RG = 2.5
Inductive switching @ 125°C
VGS = 15V, VBus = 670V
ID = 43A, RG = 2.5
Min Typ Max Unit
10.4
1.76 nF
0.32
372
48 nC
244
18
12 ns
155
40
1800
1246
µJ
2846
1558
µJ
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
IRM
IF
VF
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
DC Forward Current
Diode Forward Voltage
VR=1000V
IF = 60A
IF = 120A
IF = 60A
1000
V
Tj = 25°C
Tj = 125°C
250
500
µA
Tc = 100°C
60
1.9 2.5
A
2.2 V
Tj = 125°C
1.7
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 60A
VR = 670V
di/dt = 200A/µs
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
280
350
760
3600
ns
nC
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डाउनलोड[ APTM100SK18TG Datasheet.PDF ]


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