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CJMN2012 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Power MOSFET - JCET

भाग संख्या CJMN2012
समारोह N-Channel Power MOSFET
मैन्युफैक्चरर्स JCET 
लोगो JCET लोगो 
पूर्व दर्शन
1 Page
		
<?=CJMN2012?> डेटा पत्रक पीडीएफ

CJMN2012 pdf
026)(7(/(&75,&$/&+$5$&7(5,67,&6
Ta=25 Я unless otherwise specified
Parameter
Symbol
Test Condition
STATIC PARAMETERS
Drain-source breakdown voltage
V(BR)DSS
VGS = 0V, ID =250µA
Zero gate voltage drain current
IDSS VDS =20V,VGS = 0V
Gate-body leakage current
IGSS VGS =±10V, VDS = 0V
Gate threshold voltage (note 3)
Drain-source on-resistance(note 3)
VGS(th)
RDS(on)
VDS =VGS, ID =250µA
VGS =4.5V, ID =9.7A
VGS =2.5V, ID =9A
VGS =1.8V, ID =8.1A
VGS =1.5V, ID =4.5A
VGS =1.2V, ID =2.4A
Forward tranconductance(note 3)
gFS VDS =4V, ID =9.7A
Diode forward voltage (note 3)
VSD IS=10A, VGS = 0V
DYNAMIC PARAMETERS (note 4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Ciss
Coss
Crss
Rg
VDS =4V,VGS =0V,f =1MHz
f=1MHz
SWITCHING PARAMETERS (note 4)
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
td(on)
tr
td(off)
tf
VGEN=4.5V,VDD=4V,
ID=10A,Rg=1
RL=0.4Ω
Total Gate Charge
Gate-Source Chage
Gage-Drain Charge
Qg
Qgs
VDS=4V,VGS=5V
ID=10A
Qgd
Notes :
1.Surface mounted on FR4 board using 1 square inch pad size,1oz copper.
2.Surface mounted on FR4 board using the minimum pad size,1oz copper.
3. Pulse test : Pulse width=300μs, duty cycle2%.
4. These parameters have no way to verify.
Min Typ Max Unit
20 V
1 uA
±100 nA
0.35 0.7
1
V
9 11 m
12 13 m
15.5 16 m
21 22 m
41 m
20 S
1.2 V
1800
650
450
2.5
pF
pF
pF
Ω
12 20 ns
10 15 ns
65 100 ns
20 30 ns
32 nC
2.5 nC
6.5 nC
ZZZFMHOHFFRP
 C,Aug,2015

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डाउनलोड[ CJMN2012 Datasheet.PDF ]


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