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CJM1206 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-Channel Power MOSFET - JCET

भाग संख्या CJM1206
समारोह P-Channel Power MOSFET
मैन्युफैक्चरर्स JCET 
लोगो JCET लोगो 
पूर्व दर्शन
1 Page
		
<?=CJM1206?> डेटा पत्रक पीडीएफ

CJM1206 pdf
MOSFET ELECTRICAL CHARACTERISTICS
Ta=25 unless otherwise specified
Parameter
Static
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
Symbol
V(BR)DSS
VGS(th)
IGSS
IDSS
Drain-source on-statae resistance RDS(on)
Forward transconductancea
Dynamic
Input capacitanceb,c
Output capacitanceb,c
Reverse transfer capacitanceb,c
Total gate chargeb
gfs
Ciss
Coss
Crss
Qg
Test Condition
VGS = 0V, ID =-250µA
VDS =VGS, ID =-250µA
VDS =0V, VGS =±8V
VDS =-8V, VGS =0V
VGS =-4.5V, ID =-3.5A
VGS =-2.5V, ID =-3A
VGS =-1.8V,ID=-2.0A
VDS =-5V, ID =-4.1A
VDS =-4V,VGS =0V,f =1MHz
VDS =-4V,VGS =-4.5V,
ID =-4.1A
Gate-source chargeb
Gate-drain chargeb
Gate resistanceb,c
Turn-on delay timeb,c
Rise timeb,c
Turn-off Delay timeb,c
Fall timeb,c
Turn-on delay timeb,c
Rise timeb,c
Turn-off delay timeb,c
Fall timeb,c
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
VDS =-4V,VGS =-2.5V,
ID =-4.1A
f =1MHz
VDD=-4V,
RL=1.2, ID -3.3A,
VGEN=-4.5V,Rg=1
VDD=-4V,
RL=1.2, ID -3.3A,
VGEN=-8V,Rg=1
Drain-source body diode characteristics
Continuous source-drain diode current
Pulse diode forward currenta
Body ciode voltage
IS
ISM
VSD
IF=-3.3A
Note :
a. Pulse Test ; Pulse Width 300µs, Duty Cycle 2%.
b. Guaranteed by design, not subject to production testing.
c. These parameters have no way to verify.
Min Typ Max Units
-12
V
-0.5 - 0.9
±100 nA
-1 µA
30 45
40 60 m
60 90
6S
740
290
190
7.8 15
4.5 9
1.2
1.6
1.4 7
14
13 20
35 53
32 48
10 20
5 10
11 17
22 33
16 24
pF
nC
ns
-6
A
-20
-1.2 V
www.cj-elec.com
2
C,May,2015

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डाउनलोड[ CJM1206 Datasheet.PDF ]


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