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C3D16065A डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon Carbide Schottky Diode - Cree

भाग संख्या C3D16065A
समारोह Silicon Carbide Schottky Diode
मैन्युफैक्चरर्स Cree 
लोगो Cree लोगो 
पूर्व दर्शन
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<?=C3D16065A?> डेटा पत्रक पीडीएफ

C3D16065A pdf
Electrical Characteristics
Symbol Parameter
Typ.
Max.
Unit
Test Conditions
VF Forward Voltage
IR Reverse Current
QC Total Capacitive Charge
C Total Capacitance
1.5
2.0
18.5
38.5
44.5
877.5
80
64
1.8
2.4
95
378
V
IF = 16 A TJ=25°C
IF = 16 A TJ=175°C
μA
VR = 650 V TJ=25°C
VR = 650 V TJ=175°C
VR = 400 V, IF = 16 A
nC di/dt = 500 A/μs
TJ = 25°C
VR = 0 V, TJ = 25°C, f = 1 MHz
pF VR = 200 V, TJ = 25˚C, f = 1 MHz
VR = 400 V, TJ = 25˚C, f = 1 MHz
EC Capacitance Stored Energy
6.2
μJ VR = 400 V
Note:This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol
Parameter
RθJC Thermal Resistance from Junction to Case
Typ.
1
Unit
°C/W
Note
Fig. 9
Note
Fig. 1
Fig. 2
Fig. 5
Fig. 6
Fig. 7
Typical Performance
45
40 TJ = -55 °C
35 TJ = 25 °C
30 TJ = 75 °C
25 TJ = 125 °C
20 TJ = 175 °C
15
10
5
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Foward VVoFl(taVg)e, VF (V)
Figure 1. Forward Characteristics
2 C3D16065A Rev. -, 09-2016
30
25
20 TJ = 175 °C
15 TJ = 125 °C
TJ = 75 °C
10 TJ = 25 °C
TJ = -55 °C
5
0
0 100 200 300 400 500 600 700 800 900
ReverseVVRo(ltVag)e, VR (V)
Figure 2. Reverse Characteristics

विन्यास 6 पेज
डाउनलोड[ C3D16065A Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
C3D16065ASilicon Carbide Schottky DiodeCree
Cree
C3D16065DSilicon Carbide Schottky DiodeCREE
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