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BD634 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon PNP Power Transistor - Inchange Semiconductor

भाग संख्या BD634
समारोह Silicon PNP Power Transistor
मैन्युफैक्चरर्स Inchange Semiconductor 
लोगो Inchange Semiconductor लोगो 
पूर्व दर्शन
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<?=BD634?> डेटा पत्रक पीडीएफ

BD634 pdf
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
BD634
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= -0.1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB=B -0.1A
VBE(on) Base-Emitter On Voltage
IC= -1A; VCE= -2V
ICES Collector Cutoff Current
VCE= -45V; VBE= 0
hFE-1
DC Current Gain
IC= -25mA; VCE= -2V
hFE-2
DC Current Gain
IC= -1A; VCE= -2V
MIN MAX UNIT
-45 V
-45 V
-5 V
-0.6 V
-1.3 V
-0.2 mA
40
25
isc Websitewww.iscsemi.cn
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डाउनलोड[ BD634 Datasheet.PDF ]


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