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AUIRF952Q डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Dual N and P Channel MOSFET - Infineon

भाग संख्या AUIRF952Q
समारोह Dual N and P Channel MOSFET
मैन्युफैक्चरर्स Infineon 
लोगो Infineon लोगो 
पूर्व दर्शन
1 Page
		
<?=AUIRF952Q?> डेटा पत्रक पीडीएफ

AUIRF952Q pdf
  AUIRF9952Q
Static @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Trans conductance
IDSS  
IGSS  
Drain-to-Source Leakage Current  
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-P
N-P
Min.
30
-30
–––
–––
–––
–––
–––
–––
1.0
-1.0
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
0.015
-0.015
0.08
0.12
0.165
0.290
–––
–––
12
2.4
–––
–––
–––
–––
–––
–––
Max.
–––
–––
–––
–––
0.10
0.15
0.250
0.400
3.0
-3.0
–––
–––
2.0
-2.0
25
-25
± 100
± 100
Units
Conditions
V
VGS = 0V, ID = 250µA
VGS = 0V, ID = -250µA
V/°C
Reference to 25°C, ID = 1mA
Reference to 25°C, ID = -1mA
VGS = 10V, ID = 2.2A

VGS = 4.5V, ID = 1.0A
VGS = -10V, ID = -1.0A
VGS = -4.5V, ID = -0.5A
V
VDS = VGS, ID = 250µA
VDS = VGS, ID = -250µA
S
VDS = 15V, ID = 3.5A
VDS = -15V, ID = -2.3A
VDS =24V, VGS = 0V
µA  
VDS = -24V,VGS = 0V 
VDS =24V, VGS = 0V ,TJ = 125°C
VDS = -24V,VGS = 0V,TJ = 125°C  
nA
 
VGS = ± 20V  
VGS = ± 20V  
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg Total Gate Charge
Qgs Gate-to-Source Charge
N-Ch ––– 6.9 14
N-Channel
P-Ch ––– 6.1 12
ID = 1.8A, VDS = 10V,VGS = 10V
N-Ch –––
P-Ch –––
1.0
1.7
2.0
3.4
nC  

P-Channel
Qgd Gate-to-Drain Charge
N-Ch ––– 1.8 3.5
P-Ch ––– 1.1 2.2
ID = -2.3A,VDS = -10V,VGS = -10V
td(on) Turn-On Delay Time
N-Ch –––
P-Ch –––
6.2
9.7
12
19
N-Channel
VDD = 10V,ID = 1.0A,RG = 6.0
tr Rise Time
td(off) Turn-Off Delay Time
N-Ch ––– 8.8 18
RD = 10
P-Ch ––– 14 28

N-Ch ––– 13 26 ns   P-Channel
P-Ch ––– 20 40
VDD = -10V,ID = -1.0A,RG = 6.0
tf   Fall Time  
N-Ch ––– 3.0 6.0
P-Ch ––– 6.9 14
RD = 10
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
N-Ch ––– 190 –––
N-Channel
P-Ch ––– 190 –––
VGS = 0V,VDS = 15V,ƒ = 1.0MHz
N-Ch –––
P-Ch –––
120 –––
110 –––
pF  

P-Channel
N-Ch ––– 61 –––
P-Ch ––– 54 –––
VGS = 0V,VDS = -15V,ƒ = 1.0MHz
Diode Characteristics  
IS  
ISM  
VSD
trr
Qrr  
ton
Parameter
Continuous Source Current (Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge  
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
N-Ch ––– ––– 1.7
P-Ch ––– ––– -1.3
N-Ch ––– ––– 16
A 
P-Ch ––– ––– -16
N-Ch ––– 0.82 1.2
P-Ch ––– -0.82 -1.2
N-Ch ––– 27 53
P-Ch ––– 27 54
V
TJ = 25°C,IS = 1.25A,VGS = 0V 
TJ = 25°C,IS = -1.25A,VGS = 0V 
ns
N-Channel
TJ = 25°C ,IF = 1.25A, di/dt = 100A/µs
N-Ch ––– 28 57
P-Channel
P-Ch ––– 31 62 nC   TJ = 25°C,IF = -1.25A, di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig.23)
N-Channel ISD 2.0A, di/dt 100A/µs, VDD V(BR)DSS, TJ 150°C.
P-Channel ISD -1.3A, di/dt 84A/µs, VDD V(BR)DSS, TJ 150°C.
   NChannel Starting TJ = 25°C, L = 22mH RG = 25, IAS = 2.0A.(See Figure 12)
PChannel Starting TJ = 25°C, L = 67mH RG = 25, IAS = -1.3A.
Pulse width 300µs; duty cycle 2%.
Surface mounted on FR-4 board , t 10sec.
2 2015-10-5

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