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BD684 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon PNP Power Transistor - Inchange Semiconductor

भाग संख्या BD684
समारोह Silicon PNP Power Transistor
मैन्युफैक्चरर्स Inchange Semiconductor 
लोगो Inchange Semiconductor लोगो 
पूर्व दर्शन
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<?=BD684?> डेटा पत्रक पीडीएफ

BD684 pdf
INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
BD684
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -1.5A; IB= -6mA
VBE(on) Base-Emitter On Voltage
IC= -1.5A; VCE= -3V
ICEO Collector Cutoff Current
ICBO Collector Cutoff Current
IEBO Emitter Cutoff Current
VCE= -60V; IB= 0
VCB= -120V; IE= 0
VCB= -120V; IE= 0;TC= 100
VEB= -5V; IC= 0
hFE DC Current Gain
IC= -1.5 A ; VCE= -3V
MIN MAX UNIT
-120
V
-2.5 V
-2.5 V
-0.5 mA
-0.2
-2.0
mA
-5.0 mA
750
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark

विन्यास 2 पेज
डाउनलोड[ BD684 Datasheet.PDF ]


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