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BD678AG डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon PNP Power Transistor - Inchange Semiconductor

भाग संख्या BD678AG
समारोह Silicon PNP Power Transistor
मैन्युफैक्चरर्स Inchange Semiconductor 
लोगो Inchange Semiconductor लोगो 
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<?=BD678AG?> डेटा पत्रक पीडीएफ

BD678AG pdf
INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
BD678AG
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -40mA
VBE(on) Base-Emitter On Voltage
IC= -2A; VCE= -3V
ICEO Collector Cutoff Current
ICBO Collector Cutoff Current
IEBO Emitter Cutoff Current
VCE= -30V; IB= 0
VCB= -60V; IE= 0
VCB= -60V; IE= 0;TC= 100
VEB= -5V; IC= 0
hFE DC Current Gain
IC= -2 A ; VCE= -3V
MIN MAX UNIT
-60 V
-2.8 V
-2.5 V
-0.5 mA
-0.2
-2.0
mA
-2.0 mA
750
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark

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डाउनलोड[ BD678AG Datasheet.PDF ]


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