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KTB1366 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon PNP Power Transistors - Inchange Semiconductor

भाग संख्या KTB1366
समारोह Silicon PNP Power Transistors
मैन्युफैक्चरर्स Inchange Semiconductor 
लोगो Inchange Semiconductor लोगो 
पूर्व दर्शन
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<?=KTB1366?> डेटा पत्रक पीडीएफ

KTB1366 pdf
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
KTB1366
ELECTRICAL CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A
VBE(on) Base-Emitter On Voltage
IC= -0.5A ; VCE= -5V
ICBO Collector Cutoff Current
VCB= -60V; IE= 0
IEBO Emitter Cutoff Current
VEB= -7V; IC= 0
hFE-1
DC Current Gain
IC= -0.5A; VCE= -5V
hFE-2
DC Current Gain
IC= -3A; VCE= -5V
COB Output Capacitance
IE= 0; VCB= -10V; ftest= 1MHz
fT Current-Gain—Bandwidth Product
Switching Times
IC= -0.5A ; VCE= -5V
ton Turn-on Time
tstg Storage Time
tf Fall Time
VCC= -30V, RL= 15Ω,
IB1= -IB2= -0.2A,
MIN TYP. MAX UNIT
-60 V
-1.0 V
-1.0 V
-100 μA
-100 μA
60 200
20
150 pF
9 MHz
0.4 μs
1.7 μs
0.5 μs
hFE-1 Classifications
OY
60-120 100-200
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark

विन्यास 2 पेज
डाउनलोड[ KTB1366 Datasheet.PDF ]


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