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FDMC7672S डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Power Trench SyncFET - Fairchild Semiconductor

भाग संख्या FDMC7672S
समारोह N-Channel Power Trench SyncFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=FDMC7672S?> डेटा पत्रक पीडीएफ

FDMC7672S pdf
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
'BVDSS
'TJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 1 mA, VGS = 0 V
ID = 10 mA, referenced to 25 °C
VDS = 24 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
30
V
12 mVC
1 mA
100 nA
On Characteristics (Note 2)
VGS(th)
'VGS(th)
'TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 1 mA
1.2 1.6 3.0
V
ID = 10 mA, referenced to 25 °C
-6 mV/°C
VGS = 10 V, ID = 14.8 A
VGS = 4.5 V, ID = 12.4 A
VGS = 10 V, ID = 14.8 A
TJ = 125 °C
VDS = 5 V, ID = 14.8 A
5.0 6.0
6.1 7.1 m:
5.9 9.0
78 S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 15 V, VGS = 0 V,
f = 1 MHz
1895
770
85
1.2
2520
1025
130
3.2
pF
pF
pF
:
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDD = 15 V, ID = 14.8 A,
VGS = 10 V, RGEN = 6 :
VGS = 0 V to 10 V
VGS = 0 V to 4.5 V VDD = 15 V
ID = 14.8 A
11 21 ns
4 10 ns
26 42 ns
3 10 ns
30 42 nC
14 20 nC
5.3 nC
4.0 nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, IS = 14.8 A
VGS = 0 V, IS = 1.9 A
(Note 2)
(Note 2)
0.8 1.3
0.5 1.2
V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 14.8 A, di/dt = 300 A/Ps
29 45 ns
28 44 nC
Notes:
1. RTJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTCA is determined by
the user's board design.
a. 53 °C/W when mounted on a
1 in2 pad of 2 oz copper.
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0%.
3. EAS of 60 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 11 A, VDD = 27 V, VGS = 10 V. 100% test at L = 3 mH, IAS = 4.8 A.
©2010 Fairchild Semiconductor Corporation
FDMC7672S Rev.C3
2
www.fairchildsemi.com

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