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FDMC3612 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Power Trench MOSFET - Fairchild Semiconductor

भाग संख्या FDMC3612
समारोह N-Channel Power Trench MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=FDMC3612?> डेटा पत्रक पीडीएफ

FDMC3612 pdf
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250 μA, VGS = 0 V
ID = 250 μA, referenced to 25 °C
VDS = 80 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
100 V
109 mV/°C
1
±100
μA
nA
On Characteristics
VGS(th)
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250 μA
2.0 2.5 4.0 V
ID = 250 μA, referenced to 25 °C
-7 mV/°C
VGS = 10 V, ID = 3.3 A
VGS = 6 V, ID = 3.0 A
VGS = 10 V, ID = 3.3 A, TJ = 125 °C
VDS = 10 V, ID = 3.3 A
92 110
98 122 mΩ
177 212
13 S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 50 V, VGS = 0 V,
f = 1 MHz
662 880 pF
40 55 pF
23 35 pF
1.3 Ω
Switching Characteristics
td(on)
tr
td(off)
tf
Qg(TOT)
Qg(TOT)
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Total Gate Charge
Gate to Drain “Miller” Charge
VDD = 50 V, ID = 3.3 A,
VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V
VGS = 0 V to 5 V
VDD = 50 V,
ID = 3.3 A
7.4 15 ns
2.8 10 ns
19 34 ns
2 10 ns
14.4 21 nC
7.9 12 nC
2.3 nC
3.7 nC
Drain-Source Diode Characteristics
VSD Source to Drain Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 3.3 A
VGS = 0 V, IS = 2 A
(Note 2)
(Note 2)
IF = 3.3 A, di/dt = 100 A/μs
0.88 1.2
0.77 1.2
V
34 55 ns
37 60 nC
NOTES:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a) 53 °C/W when mounted
on a 1 in2pad of 2 oz copper
b) 125 °C/W when mounted
on a minimum pad of 2 oz
copper
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting TJ = 25 °C; N-ch: L = 1 mH, IAS = 8 A, VDD = 90 V, VGS = 10 V.
©2012 Fairchild Semiconductor Corporation
FDMC3612 Rev.C2
2
www.fairchildsemi.com

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डाउनलोड[ FDMC3612 Datasheet.PDF ]


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