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C3M0065090J डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon Carbide Power MOSFET - Cree

भाग संख्या C3M0065090J
समारोह Silicon Carbide Power MOSFET
मैन्युफैक्चरर्स Cree 
लोगो Cree लोगो 
पूर्व दर्शन
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C3M0065090J pdf
Electrical Characteristics (TC = 25˚C unless otherwise specified)
Symbol
Parameter
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th)
Gate Threshold Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Source Leakage Current
RDS(on) Drain-Source On-State Resistance
gfs Transconductance
Min.
900
1.8
Typ.
2.1
1.6
1
10
65
90
13.6
11.6
Ciss Input Capacitance
660
Coss Output Capacitance
60
Crss Reverse Transfer Capacitance
4.0
Eoss Coss Stored Energy
16
EON Turn-On Switching Energy (Body Diode FWD)
39
EOFF Turn Off Switching Energy (Body Diode FWD)
td(on) Turn-On Delay Time
17
9
tr Rise Time
10
td(off)
Turn-Off Delay Time
16
tf
RG(int)
Qgs
Qgd
Qg
Fall Time
Internal Gate Resistance
Gate to Source Charge
Gate to Drain Charge
Total Gate Charge
6
4.7
7.5
12
30.4
Max.
3.5
100
250
78
Unit
V
V
V
μA
nA
m
S
Test Conditions
VGS = 0 V, ID = 100 μA
VDS = VGS, ID = 5 mA
VDS = VGS, ID = 5 mA, TJ = 150ºC
VDS = 900 V, VGS = 0 V
VGS = 15 V, VDS = 0 V
VGS = 15 V, ID = 20 A
VGS = 15 V, ID = 20A, TJ = 150ºC
VDS= 15 V, IDS= 20 A
VDS= 15 V, IDS= 20 A, TJ = 150ºC
pF VGS = 0 V, VDS = 600 V
f = 1 MHz
VAC = 25 mV
μJ
μJ VDS = 400 V, VGS = -4 V/15 V, ID = 20A,
RG(ext) = 2.5Ω, L= 77 μH, TJ = 150ºC
VDD = 400 V, VGS = -4 V/15 V
ns
ID = 20 A, RG(ext) = 2.5 Ω,
Timing relative to VDS
Inductive load
Ω f = 1 MHz, VAC = 25 mV
VDS = 400 V, VGS = -4 V/15 V
nC ID = 20 A
Per IEC60747-8-4 pg 21
Reverse Diode Characteristics (TC = 25˚C unless otherwise specified)
Symbol Parameter
VSD Diode Forward Voltage
IS Continuous Diode Forward Current
IS, pulse
Diode pulse Current
trr Reverse Recovery time
Qrr Reverse Recovery Charge
Irrm Peak Reverse Recovery Current
Thermal Characteristics
Typ.
4.8
4.4
12
245
29
Max.
22
90
Unit
V
V
A
A
ns
nC
A
Test Conditions
VGS = -4 V, ISD = 10 A
VGS = -4 V, ISD = 10 A, TJ = 150 °C
VGS = -4 V
VGS = -4 V, pulse width tP limited by Tjmax
VGS = -4 V, ISD = 20 A, VR = 500 V
dif/dt = 4100 A/µs, TJ = 150 °C
Symbol
RθJC
RθJA
Parameter
Thermal Resistance from Junction to Case
Thermal Resistance From Junction to Ambient
Max.
1.1
40
Unit
°C/W
Test Conditions
Note
Fig. 11
Fig. 4,
5, 6
Fig. 7
Fig. 17,
18
Fig. 16
Fig. 26,
30
Note. 3
Fig. 27
Fig. 12
Note
Fig. 8,
9, 10
Note 1
Note 1
Note 1
Note
Fig. 21
Note (3): Turn-off and Turn-on switching energy and timing values measured using SiC MOSFET Body Diode
2 C3M0065090J Rev. C, 01-2018

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