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2SA1261-Z डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon PNP Power Transistor - Inchange Semiconductor

भाग संख्या 2SA1261-Z
समारोह Silicon PNP Power Transistor
मैन्युफैक्चरर्स Inchange Semiconductor 
लोगो Inchange Semiconductor लोगो 
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2SA1261-Z pdf
isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SA1261-Z
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -5.0A; IB= -0.5A, L=1mH
VCEX(SUS)-1
VCEX(SUS)-2
Collector-Emitter Sustaining Voltage
Collector-Emitter Sustaining Voltage
IC= -5.0A ; IB1=-IB2= -0.5A,
VBE(OFF)=5.0V, L=180μH,clamped
IC= -10A ; IB1= -1.0A; IB2= -0.5A,
VBE(OFF)= 5.0V, L= 180μH,clamped
VCE(sat)* Collector-Emitter Saturation Voltage IC= -5.0A; IB= -0.5A
VBE(sat)* Base-Emitter Saturation Voltage
IC= -5.0A; IB= -0.5A
ICBO Collector Cutoff Current
VCB= -100V; IE= 0
ICER Collector Cutoff Current
ICEX Collector Cutoff Current
IEBO Emitter Cutoff Current
VCE= -100V; RBE= 51Ω,Ta=125
VCE= -100V; VBE(off)= -1.5V
VCE= -100V; VBE(off)= -1.5V, Ta=125
VEB= -5V; IC= 0
hFE-1*
DC Current Gain
IC= -0.5A; VCE= -5V
hFE-2*
DC Current Gain
IC= -3.0A; VCE= -5V
hFE-3*
DC Current Gain
IC= -5.0A; VCE= -5V
Switching times
ton Turn-on Time
tstg Storage Time
tf Fall Time
*:PW≤350us,duty cycle≤2%
IC= -5.0A, RL= 10Ω,
IB1= -IB2= -0.5A, VCC-50V
hFE-2 Classifications
ML K
40-80 60-120 100-200
MIN MAX UNIT
-100
V
-100
V
-100
V
-0.6 V
-1.5 V
-10 μA
-1.0 mA
-10 μA
-1.0 mA
-10 μA
40 200
40 200
20
0.5 μs
1.5 μs
0.5 μs
isc websitewww.iscsemi.com
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