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AP9932GM डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 2N AND 2P-CHANNEL ENHANCEMENT MODE POWER MOSFET - Advanced Power Electronics

भाग संख्या AP9932GM
समारोह 2N AND 2P-CHANNEL ENHANCEMENT MODE POWER MOSFET
मैन्युफैक्चरर्स Advanced Power Electronics 
लोगो Advanced Power Electronics लोगो 
पूर्व दर्शन
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<?=AP9932GM?> डेटा पत्रक पीडीएफ

AP9932GM pdf
AP9932GM
N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=5A
VGS=4.5V, ID=4A
VGS=2.5V, ID=2A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
VDS=5V, ID=4A
VDS=30V, VGS=0V
VDS=24V, VGS=0V
VGS=±12V
ID=4A
VDS=24V
VGS=4.5V
VDS=15V
ID=1A
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RG=3.3Ω,VGS=5V
RD=15Ω
VGS=0V
VDS=25V
f=1.0MHz
30 - - V
- 0.03 - V/
- - 40 mΩ
- - 50 mΩ
- - 60 mΩ
0.5 - - V
- 13 -
S
- - 1 uA
- - 25 uA
- - ±100 nA
- 9 15 nC
- 1.6 - nC
- 4 - nC
- 8 - ns
- 9 - ns
- 17 - ns
- 5 - ns
- 630 1000 pF
- 140 - pF
- 65 - pF
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
IS=1.2A, VGS=0V
IS=4A, VGS=0V
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.2 V
- 17 - ns
- 9 - nC

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डाउनलोड[ AP9932GM Datasheet.PDF ]


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