DataSheet.in

LE25S81FD डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 8M-bit (1024K x 8) Serial Flash Memory - ON Semiconductor

भाग संख्या LE25S81FD
समारोह 8M-bit (1024K x 8) Serial Flash Memory
मैन्युफैक्चरर्स ON Semiconductor 
लोगो ON Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=LE25S81FD?> डेटा पत्रक पीडीएफ

LE25S81FD pdf
LE25S81FD
Specifications
Absolute Maximum Ratings
Parameter
Maximum supply voltage
DC voltage (all pins)
Storage temperature
Symbol
Tstg
Conditions
With respect to VSS
With respect to VSS
Ratings
-0.5 to +2.4
-0.5 to VDD+0.5
-55 to +150
unit
V
V
C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Operating Conditions
Parameter
Operating supply voltage
Operating ambient temperature
Symbol
Write operation
Read operation
Conditions
Ratings
1.65 to 1.95
-40 to +90
-40 to +90
unit
V
C
Allowable DC Operating Conditions
Parameter
Read mode operating current
Write mode operating current
(erase+page program)
CMOS standby current
Power-down standby current
Input leakage current
Output leakage current
Input low voltage
Input high voltage
Output low voltage
Output high voltage
Symbol
ICCR
ICCW
ISB
IDSB
ILI
ILO
VIL
VIH
VOL
VOH
Conditions
SCK = 0.1VDD/0.9VDD,
HOLD = WP = 0.9VDD,
SO = open
Single
Dual *1
tSSE = tSE = tCHE = typ., tPP = max
33MHz
40MHz
40MHz
min
Ratings
typ
max
6
8
10
40
unit
mA
mA
mA
mA
CS = VDD, HOLD = WP = VDD,
SI = VSS/VDD, SO = open
CS = VDD, HOLD = WP = VDD,
SI = VSS/VDD, SO = open
IOL = 100A, VDD = VDD min
IOL = 1.6mA, VDD = VDD min
IOH = -100A, VDD = VDD min
50 A
15 A
2 A
2 A
-0.3
0.7VDD
0.3VDD
VDD+0.3
0.2
0.4
V
V
V
VCC-0.2
V
*1: Dual Read is not supported on LE25S81FD.
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended
Operating Ranges limits may affect device reliability.
Data hold, Rewriting frequency
Parameter
Rewriting frequency
Data hold
Conditions
Program/Erase
Status resister write
min
100,000
1,000
20
max
unit
times/
Sector
year
Pin Capacitance at Ta = 25C, f = 1MHz
Parameter
Symbol
Conditions
Ratings
max
unit
Output pin capacitance
CSO
VSO = 0V
12 pF
Input pin Capacitance
CIN
VIN = 0V
6 pF
Note: These parameter values do not represent the results of measurements undertaken for all devices but rather values for
some of the sampled devices.
No.A2262-2/23

विन्यास 23 पेज
डाउनलोड[ LE25S81FD Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
LE25S81FD8M-bit (1024K x 8) Serial Flash MemoryON Semiconductor
ON Semiconductor


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English