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CHA2069 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 18-31GHz Low Noise Amplifier - United Monolithic Semiconductors

भाग संख्या CHA2069
समारोह 18-31GHz Low Noise Amplifier
मैन्युफैक्चरर्स United Monolithic Semiconductors 
लोगो United Monolithic Semiconductors लोगो 
पूर्व दर्शन
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<?=CHA2069?> डेटा पत्रक पीडीएफ

CHA2069 pdf
CHA2069
18-31GHz Low Noise Amplifier
Electrical Characteristics
Tamb = +25°C, Vd = +4,5V Pads:B=D=E=Gnd
Symbol
Parameter
Fop Operating frequency range
Min Typ Max Unit
18 31 Ghz
G Gain (1)
18 22
dB
G Gain flatness (1)
± 1 ± 1.5 dB
NF Noise figure (1)
2.5 3.5 dB
VSWRin Input VSWR (1)
2.0:1 2.5:1
VSWRout Ouput VSWR (1)
2:0:1 2.5:1
IP3
P1dB
3rd order intercept point
Output power at 1dB gain compression
20 dBm
10 dBm
Id Drain bias current (2)
55 75 mA
(1) These values are representative on-wafer measurements that are made without bonding wires at the
RF ports.
(2) This current is the typical value from the low noise low consumption biasing ( B & D & E grounded ).
Absolute Maximum Ratings (3)
Tamb = +25°C
Symbol
Parameter
Values
Unit
Vd Drain bias voltage (5)
5.0 V
Pin Maximum peak input power overdrive (4)
+15 dBm
Top Operating temperature range
-40 to +85
°C
Tstg Storage temperature range
-55 to +125
°C
(3) Operation of this device above anyone of these paramaters may cause permanent damage.
(4) Duration < 1s.
(5) See chip biasing options pp7
Ref. : DSCHA20679273 - 8-Sep-99
2/8 Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

विन्यास 8 पेज
डाउनलोड[ CHA2069 Datasheet.PDF ]


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