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4616 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - MOSFET - Tuofeng Semiconductor

भाग संख्या 4616
समारोह MOSFET
मैन्युफैक्चरर्स Tuofeng Semiconductor 
लोगो Tuofeng Semiconductor लोगो 
पूर्व दर्शन
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<?=4616?> डेटा पत्रक पीडीएफ

4616 pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
4616
N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
Conditions
ID=250µA, VGS=0V
VDS=30V, VGS=0V
Min Typ Max Units
30 V
1
µA
IGSS
VGS(th)
ID(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS=±16V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
10
1.2 1.8 2.4
40
µA
V
A
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=8A
16.5 22
m
gFS Forward Transconductance
VSD Diode Forward Voltage
VGS=4.5V, ID=6A
VDS=5V, ID=8A
IS=1A,VGS=0V
19.5 32
30
0.75 1
m
S
V
IS Maximum Body-Diode Continuous Current
2.5 A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
VGS=0V, VDS=15V, f=1MHz
600 740 888
77 110 145
pF
pF
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=0V, f=1MHz
50 82 115
0.5 1.1 1.7
pF
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
12 15 18
nC
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=15V, ID=8A
6 7.5 9
2.5
nC
nC
Qgd Gate Drain Charge
3 nC
tD(on)
tr
tD(off)
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=15V, RL=1.8,
RGEN=3
5
3.5
19
ns
ns
ns
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=8A, dI/dt=500A/µs
Qrr Body Diode Reverse Recovery Charge IF=8A, dI/dt=500A/µs
3.5
6 8 10
14 18 22
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value
in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
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