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CEP703AL डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Logic Level Enhancement Mode Field Effect Transistor - Chino-Excel Technology

भाग संख्या CEP703AL
समारोह N-Channel Logic Level Enhancement Mode Field Effect Transistor
मैन्युफैक्चरर्स Chino-Excel Technology 
लोगो Chino-Excel Technology लोगो 
पूर्व दर्शन
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<?=CEP703AL?> डेटा पत्रक पीडीएफ

CEP703AL pdf
CEP703AL/CEB703AL
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 24V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Dynamic Characteristics c
VGS(th)
RDS(on)
gFS
VGS = VDS, ID = 250µA
VGS = 10V, ID = 25A
VGS = 4.5V, ID = 10A
VDS = 10V, ID = 25A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Ciss
Coss
Crss
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 15V, ID = 25A,
VGS = 10V, RGEN = 24
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 24V, ID = 25A,
VGS = 5V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
VSD
VGS = 0V, IS = 25A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
Min
30
1
Typ
14
22
30
1340
270
82
18
4.4
83
16
10
3
4
Max Units
1
100
-100
V
µA
nA
nA
3V
17 m
30 m
S
pF
pF
pF
23 ns
13 ns
120 ns
30 ns
nC
nC
nC
40 A
1.3 V
4
2

विन्यास 4 पेज
डाउनलोड[ CEP703AL Datasheet.PDF ]


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