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CEP05P03 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-Channel Enhancement Mode Field Effect Transistor - Chino-Excel Technology

भाग संख्या CEP05P03
समारोह P-Channel Enhancement Mode Field Effect Transistor
मैन्युफैक्चरर्स Chino-Excel Technology 
लोगो Chino-Excel Technology लोगो 
पूर्व दर्शन
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<?=CEP05P03?> डेटा पत्रक पीडीएफ

CEP05P03 pdf
CEP05P03/CEB05P03
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = -250µA
VDS = -30V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Dynamic Characteristics c
VGS(th)
RDS(on)
gFS
VGS = VDS, ID = -250µA
VGS = -10V, ID = -4.9A
VGS = -4.5V, ID = -2A
VDS = -15V, ID = -4.9A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Ciss
Coss
Crss
VDS = -15V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = -15V, ID = -1A,
VGS = -10V, RGEN = 6
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = -15V, ID = -4.9A,
VGS = -10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
VSD
VGS = 0V, IS = -1.7A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
Min
-30
-1
5
Typ
-1.5
42
78
1040
420
150
8
11
23
14
22.5
2
6
-0.79
Max Units
-1
100
-100
V
µA
nA
nA
-3 V
70 m
120 m
S
pF
pF
pF
15 ns
20 ns
40 ns
25 ns
29 nC
nC
nC
-18 A
-1.2 V
4
4 - 23

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डाउनलोड[ CEP05P03 Datasheet.PDF ]


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CEP05P03P-Channel Enhancement Mode Field Effect TransistorChino-Excel Technology
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