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CEM9435 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-Channel Enhancement Mode MOSFET - Chino-Excel Technology

भाग संख्या CEM9435
समारोह P-Channel Enhancement Mode MOSFET
मैन्युफैक्चरर्स Chino-Excel Technology 
लोगो Chino-Excel Technology लोगो 
पूर्व दर्शन
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<?=CEM9435?> डेटा पत्रक पीडीएफ

CEM9435 pdf
CEM9435
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics c
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = -250µA
VDS = -24V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
-30
-1
100
-100
V
µA
nA
nA
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics d
VGS(th)
RDS(on)
VGS = VDS, ID = -250µA
VGS = -10V, ID = -5A
VGS = -4.5V, ID = -4A
-1
-3 V
50 60 m
70 95 m
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
Ciss
Coss
Crss
VDS = -15V, VGS = 0V,
f = 1.0 MHz
540
95
65
pF
pF
pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = -15V, ID = -1A,
VGS = -10V, RGEN = 6
Turn-On Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = -15V, ID = -5A,
VGS = -10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
10 20 ns
3 6 ns
28 56 ns
4 8 ns
10 13 nC
1 nC
2 nC
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
VSD
VGS = 0V, IS = -2A
-5 A
-1.2 V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
2

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डाउनलोड[ CEM9435 Datasheet.PDF ]


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