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IS42S86400D डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 512Mb SDRAM - ISSI

भाग संख्या IS42S86400D
समारोह 512Mb SDRAM
मैन्युफैक्चरर्स ISSI 
लोगो ISSI लोगो 
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IS42S86400D pdf
IS42/45R86400D/16320D/32160D, IS42/45S86400D/16320D/32160D
DEVICE OVERVIEW
The 512Mb SDRAM is a high speed CMOS, dynamic
random-access memory designed to operate in either 3.3V
Vdd/Vddq or 2.5V Vdd/Vddq memory systems, depending
on the DRAM option. Internally configured as a quad-bank
DRAM with a synchronous interface.
The 512Mb SDRAM (536,870,912 bits) includes an AUTO
REFRESH MODE, and a power-saving, power-down
mode. All signals are registered on the positive edge of
the clock signal, CLK. All inputs and outputs are LVTTL
compatible.
The 512Mb SDRAM has the ability to synchronously burst
data at a high data rate with automatic column-address
generation, the ability to interleave between internal banks
to hide precharge time and the capability to randomly
change column addresses on each clock cycle during
burst access.
A self-timed row precharge initiated at the end of the burst
sequence is available with the AUTO PRECHARGE function
enabled.  Precharge one bank while accessing one of the
other three banks will hide the precharge cycles and provide
seamless, high-speed, random-access operation.
SDRAM read and write accesses are burst oriented starting
at a selected location and continuing for a programmed
number of locations in a programmed sequence. The
registration of an ACTIVE command begins accesses,
followed by a READ or WRITE command. The ACTIVE
command in conjunction with address bits registered are
used to select the bank and row to be accessed (BA0,
BA1 select the bank; A0-A12 select the row). The READ
or WRITE commands in conjunction with address bits
registered are used to select the starting column location
for the burst access.
Programmable READ or WRITE burst lengths consist of
1, 2, 4 and 8 locations or full page, with a burst terminate
option.
FUNCTIONAL BLOCK DIAGRAM (FOR 8MX16X4 BANKS SHOWN)
CLK
CKE
CS
RAS
CAS
WE
A10
A12
A11
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
BA0
BA1
COMMAND
DECODER
&
CLOCK
GENERATOR
MODE
REGISTER
13
ROW
ADDRESS
13 LATCH
REFRESH
CONTROLLER
SELF
REFRESH
CONTROLLER
REFRESH
COUNTER
ROW
ADDRESS
BUFFER
13
13
DATA IN
BUFFER
16 16
2
DQML
DQMH
DQ 0-15
DATA OUT
BUFFER
16 16
VDD/VDDQ
Vss/VssQ
8192
8192
8192
8192
MEMORY CELL
ARRAY
BANK 0
SENSE AMP I/O GATE
COLUMN
ADDRESS LATCH
10
BURST COUNTER
COLUMN
ADDRESS BUFFER
BANK CONTROL LOGIC
1024
(x 16)
COLUMN DECODER
10
2 Integrated Silicon Solution, Inc. — www.issi.com
Rev. A
08/29/2012

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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IS42S86400B32M x 16 512Mb SYNCHRONOUS DRAMIntegrated Silicon Solution
Integrated Silicon Solution
IS42S86400D512Mb SDRAMISSI
ISSI


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