DataSheet.in

DMN30H4D0LFDE डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-CHANNEL ENHANCEMENT MODE MOSFET - Diodes

भाग संख्या DMN30H4D0LFDE
समारोह N-CHANNEL ENHANCEMENT MODE MOSFET
मैन्युफैक्चरर्स Diodes 
लोगो Diodes लोगो 
पूर्व दर्शन
1 Page
		
<?=DMN30H4D0LFDE?> डेटा पत्रक पीडीएफ

DMN30H4D0LFDE pdf
DMN30H4D0LFDE
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 6) VGS = 10V
Pulsed Drain Current (10μs pulse, duty cycle 1%)
Maximum Body Diode Continuous Current (Note 6)
Steady
State
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
IDM
IS
Value
300
±20
0.55
0.43
2
2
Units
V
V
A
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
(Note 5)
(Note 6)
(Note 5)
(Note 6)
(Note 6)
Symbol
PD
RθJA
RθJC
TJ, TSTG
Value
0.63
1.98
189
61
9.3
-55 to +150
Units
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Symbol Min
BVDSS
IDSS
IGSS
300
VGS(th)
RDS(ON)
VSD
1
Ciss
Coss
Crss
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
Typ Max
⎯⎯
1
±100
1.7 2.8
2.3 4
2.3 4
2.4 6
0.7 1.2
187.3
11.7
8.7
7.6
0.5
3.3
4.9
4.7
25.8
17.5
Unit Test Condition
V VGS = 0V, ID = 250µA
µA VDS = 240V, VGS = 0V
nA VGS = ±20V, VDS = 0V
V VDS = VGS, ID = 250µA
VGS = 10V, ID = 0.3A
VGS = 4.5V, ID = 0.2A
VGS = 2.7V, ID = 0.1A
V VGS = 0V, IS = 0.3A
pF
VDS = 25V, VGS = 0V,
f = 1MHz
nC
VDS = 192V, VGS = 10V,
ID = 0.5A
nS
VDS = 60V, RL =200
VGS = 10V, RG = 25
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect
8. Guaranteed by design. Not subject to production testing
DMN30H4D0LFDE
Document number: DS36380 Rev. 4 - 2
2 of 6
www.diodes.com
May 2014
© Diodes Incorporated

विन्यास 6 पेज
डाउनलोड[ DMN30H4D0LFDE Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
DMN30H4D0LFDEN-CHANNEL ENHANCEMENT MODE MOSFETDiodes
Diodes


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English