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DMN10H220LE डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-CHANNEL ENHANCEMENT MODE MOSFET - Diodes

भाग संख्या DMN10H220LE
समारोह N-CHANNEL ENHANCEMENT MODE MOSFET
मैन्युफैक्चरर्स Diodes 
लोगो Diodes लोगो 
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DMN10H220LE pdf
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 5) VGS = 10V
Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
TA = +25°C
TA = +70°C
TC = +25°C
TC = +70°C
Symbol
VDSS
VGSS
ID
ID
IS
IDM
DMN10H220LE
Value
100
20
2.3
1.8
6.2
4.9
1.5
8
Units
V
V
A
A
A
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
TA = +25°C
TA = +70°C
TC = +25°C
Symbol
PD
RJA
PD
RJC
TJ, TSTG
Value
1.8
1.1
69
14
8.7
-55 to +150
Units
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistnace
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Symbol Min
BVDSS
IDSS
IGSS
100
VGS(th)
RDS(ON)
VSD
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
1
Typ Max Unit
Test Condition
— — V VGS = 0V, ID = 250µA
1 µA VDS = 100V, VGS = 0V
±100 nA VGS = 16V, VDS = 0V
1.7 2.5
V VDS = VGS, ID = 250µA
155 220 mΩ VGS = 10V, ID = 1.6A
190 250
VGS = 4.5V, ID = 1.3A
0.8 1.5
V VGS = 0V, IS = 1.1A
401
22
17
pF
VDS = 25V, VGS = 0V
f = 1.0MHz
2.1
4.1
VDS = 0V, VGS = 0V, f = 1.0MHz
8.3
1.5 nC VDS = 50V, ID = 1.6A
2
6.8
8.2
7.9
ns VDS = 50V, VGS = 4.5V,
RG = 6.8ID = 1.0A
3.6
17 ns
9.8 nC IS = 1.1A, di/dt =100A/s
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1-inch square copper plate.
6 .Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.
DMN10H220LE
Document number: DS36475 Rev. 3 - 2
2 of 7
www.diodes.com
April 2015
© Diodes Incorporated

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