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DMN10H099SFG डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-CHANNEL ENHANCEMENT MODE MOSFET - Diodes

भाग संख्या DMN10H099SFG
समारोह N-CHANNEL ENHANCEMENT MODE MOSFET
मैन्युफैक्चरर्स Diodes 
लोगो Diodes लोगो 
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DMN10H099SFG pdf
DMN10H099SFG
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 6) VGS = 10V
Continuous Drain Current (Note 6) VGS = 6V
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Steady
State
t<10s
Steady
State
t<10s
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
ID
ID
ID
IDM
Value
100
±20
4.2
3.3
5.8
4.5
3.6
2.9
5.2
4.1
20
Units
V
V
A
A
A
A
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Total Power Dissipation (Note 5)
Characteristic
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
TA = +25°C
TA = +70°C
Steady state
t<10s
TA = +25°C
TA = +70°C
Steady state
t<10s
Symbol
PD
RJA
PD
RθJA
RθJC
TJ, TSTG
Value
0.98
0.57
131
76
2.31
1.18
55
28
6.9
-55 to +150
Units
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge VGS = 10V
Total Gate Charge VGS = 4.5V
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Symbol Min Typ Max
BVDSS
IDSS
IGSS
100
-
-
--
- 1.0
- ±100
VGS(th)
RDS (ON)
|Yfs|
VSD
1.5
-
-
-
-
2.0
54
58
13
0.77
3.0
80
99
-
-
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
- 1172 -
- 40.8 -
- 31.3 -
- 1.6 -
- 25.2 -
- 12.2 -
- 5.3 -
- 5.9 -
- 5.4 -
- 5.9 -
- 20.0 -
- 7.3 -
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
POWERDI is a registered trademark of Diodes Incorporated
DMN10H1099SFG
Document number: DS36371 Rev. 2 - 2
2 of 6
www.diodes.com
Unit Test Condition
V VGS = 0V, ID = 250μA
μA VDS = 80V, VGS = 0V
nA VGS = ±20V, VDS = 0V
V VDS = VGS, ID = 250μA
m
VGS = 10V, ID = 3.3A
VGS = 6.0V, ID = 3.0A
S VDS = 10V, ID = 3.3A
V VGS = 0V, IS = 3.2A
pF
pF
pF
VDS = 50V, VGS = 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1.0MHz
nC
nC
nC
VDS = 50V, ID = 3.3A
nC
ns
ns VGS = 10V, VDS = 50V,
ns RG = 6.0, ID = 3.3A
ns
January 2014
© Diodes Incorporated

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