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DMJ7N70SK3 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-CHANNEL ENHANCEMENT MODE MOSFET - Diodes

भाग संख्या DMJ7N70SK3
समारोह N-CHANNEL ENHANCEMENT MODE MOSFET
मैन्युफैक्चरर्स Diodes 
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DMJ7N70SK3 pdf
DMJ7N70SK3
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 5) VGS = 10V
Maximum Body Diode Forward Current (Note 5)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Avalanche Current (Note 6)
Avalanche Energy (Note 6)
Peak Diode Recovery dv/dt
TC = +25°C
TC = +100°C
Symbol
VDSS
VGSS
ID
IS
IDM
IAR
EAR
dv/dt
Value
700
±30
3.9
2.5
3.0
15.6
1.5
76
11.8
Units
V
V
A
A
A
A
mJ
V/ns
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
TC = +25°C
TC = +100°C
Symbol
PD
RθJA
RθJC
TJ, TSTG
Value
28
11
38
2.1
-55 to +150
Units
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Time (TJ = +150°C)
Body Diode Reverse Recovery Charge
Body Diode Reverse Recovery Charge (TJ = +150°C)
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS(ON)
VSD
Ciss
Coss
Crss
RG
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
trr
Qrr
Qrr
Min
700
2






Typ
2.9
1
0.9
351
66
1.1
3.5
13.9
1.9
8.5
8.5
11.6
24.5
10
212
251
1.8
2.3
Max
1
100
4
1.25
1.3






Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout.
6. UIS in production with VDD = 50V, VGS = 10V, L = 60mH, TJ = +25°C.
7. Short duration pulse test used to minimize self-heating effect
8. Guaranteed by design. Not subject to production testing
Unit Test Condition
V VGS = 0V, ID = 250µA
µA VDS = 700V, VGS = 0V
nA VGS = ±30V, VDS = 0V
V VDS = VGS, ID = 250µA
VGS = 10V, ID = 2.5A
V VGS = 0V, IS = 5A
pF
VDS = 50V, f = 1MHz,
VGS = 0V
VDS = 0V, VGS = 0V, f = 1MHz
nC
VDD = 560V, ID = 5A,
VGS = 10V
ns
VDD = 350V, VGS = 10V,
RG = 4.7, ID = 2.5A
ns
ns
µC IS = 5A, dI/dt = 100A/μs
µC
DMJ7N70SK3
Document number: DS36907 Rev. 3 - 2
2 of 6
www.diodes.com
May 2014
© Diodes Incorporated

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