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2N3053 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon NPN Power Transistor - Inchange Semiconductor

भाग संख्या 2N3053
समारोह Silicon NPN Power Transistor
मैन्युफैक्चरर्स Inchange Semiconductor 
लोगो Inchange Semiconductor लोगो 
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<?=2N3053?> डेटा पत्रक पीडीएफ

2N3053 pdf
INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
2N3053
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-Base Breakdown Voltage
IC=0.1mA ; IE=0
V(BR)EBO Emitter-Base Breakdown Voltage
VCEO(SUS) Collector – Emitter Voltage
VCER(SUS) Collector – Emitter Voltage
VCE(sat) Collector-Emitter Saturation Voltage
VBE(sat) Base-Emitter Saturation Voltage
ICBO Collector Cutoff Current
IC=0.1mA ; IE=0
IB = 100mA ;IB = 0
RBE = 10W IC= 100mA
IC=150mA; IB= 15mA
IC= 150mA ; IB=15mA
VCE=30V; IB=0
IEBO Emitter Cutoff Current
VEB= 4V; IC=0
h21E Static Forward Current Transfer ratio IC= 0.15A ; VCE= 10V
fT Current Gain-Bandwidth Product
IC= 50mA ; VCE= 10V;f=20MHz
C22b Output Capacitance
VCB = 10V f =1MHz
C11b Input Capacitance
VCB = 10V f =1MHz
MIN MAX UNIT
60 V
5V
40 V
50 V
1.4 V
1.7 V
0.25 uA
0.25 uA
50 250
100 MHz
15 pF
80 pF
isc websitewww.iscsemi.cn
isc & iscsemi is registered trademark
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