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KP8N60D डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N CHANNEL MOS FIELD EFFECT TRANSISTOR - KEC

भाग संख्या KP8N60D
समारोह N CHANNEL MOS FIELD EFFECT TRANSISTOR
मैन्युफैक्चरर्स KEC 
लोगो KEC लोगो 
पूर्व दर्शन
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<?=KP8N60D?> डेटा पत्रक पीडीएफ

KP8N60D pdf
KP8N60D/I
ELECTRICAL CHARACTERISTICS (Tc=25 )
Static
CHARACTERISTIC
SYMBOL
TEST CONDITION
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain Cut-off Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source ON Resistance
Dynamic
BVDSS
ID=250 A, VGS=0V
BVDSS/ Tj ID=250 A, Referenced to 25
IDSS VDS=600V, VGS=0V
Vth VDS=VGS, ID=250 A
IGSS VGS= 30V, VDS=0V
RDS(ON)
VGS=10V, ID=4A
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay time
Turn-on Rise time
Turn-off Delay time
Turn-off Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode Ratings
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
VDS=480V, ID=8A
VGS=10V
(Note 5)
VDD=300V
ID=8A
RG=25
(Note4,5)
VDS=25V, VGS=0V, f=1.0MHz
Continuous Source Current
Pulsed Source Current
IS
VGS<Vth
ISP
Diode Forward Voltage
VSD IS=8A, VGS=0V
Reverse Recovery Time
Reverse Recovery Charge
trr IS=8A, VGS=0V,
Qrr dIs/dt=100A/ s
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L =3.65mH, IS=8A, VDD=50V, RG=25 , Starting Tj=25 .
Note 3) IS 8A, dI/dt 100A/ , VDD BVDSS, Starting Tj=25 .
Note 4) Pulse Test : Pulse width 10 , Duty Cycle 2%.
Note 5) Essentially independent of operating temperature.
Marking
MIN. TYP. MAX. UNIT
600 - - V
- 0.6 - V/
- - 10 A
2.0 - 4.0 V
- - 100 nA
- 0.52 0.58
- 16 -
- 3.1 -
- 6.5 -
- 19 -
- 20 -
- 49 -
- 15 -
- 600 -
- 550 -
- 2.7 -
nC
ns
pF
- -8
A
- - 32
- - 1.4 V
- 280 -
ns
- 2.4 -
C
1
KP8N60
D 001
1
2
KP8N60
I 001
2
2013. 9. 23
1 PRODUCT NAME
2 LOT NO
Revision No : 0
2/6

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डाउनलोड[ KP8N60D Datasheet.PDF ]


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