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1MBI3600U4D-120 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - IGBT MODULE - Fuji Electric

भाग संख्या 1MBI3600U4D-120
समारोह IGBT MODULE
मैन्युफैक्चरर्स Fuji Electric 
लोगो Fuji Electric लोगो 
पूर्व दर्शन
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<?=1MBI3600U4D-120?> डेटा पत्रक पीडीएफ

1MBI3600U4D-120 pdf
1MBI3600U4D-120
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.)
8000
Tj=25°C ,chip
VGE=20V 15V 12V
7000
6000
5000
4000
3000
10V
2000
1000
0
0.0
8V
1.0 2.0 3.0 4.0
Collector-Emitter voltage : VCE [V]
5.0
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
8000
VGE=+15V,chip
7000
Tj=25°C
Tj=125°C
6000
5000
4000
3000
2000
1000
0
0.0 1.0 2.0 3.0 4.0
Collector-Emitter voltage : VCE [V]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25°C
1000
Cies
100
Cres
Coes
10
1
0 10 20 30
Collector-Emitter voltage : VCE [V]
IGBT Modules
8000
7000
6000
5000
4000
3000
2000
1000
0
0.0
Tj= 125°C, chip
VGE=20V 15V
12V
10V
8V
1.0 2.0 3.0 4.0
Collector-Emitter voltage : VCE [V]
5.0
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj=25°C ,chip
10
8
6
4
Ic=7200A
2 Ic=3600A
Ic=1800A
0
5 10 15 20 25
Gate - Emitter voltage : VGE [ V ]
1000
Dynamic Gate charge (typ.)
Tj= 25°C
VGE
800
VCE
600
25
20
15
400 10
200 5
00
0 3000 6000 9000 12000 15000 18000
Gate charge : Qg [ nC ]
2

विन्यास 6 पेज
डाउनलोड[ 1MBI3600U4D-120 Datasheet.PDF ]


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1MBI3600U4D-120IGBT MODULEFuji Electric
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