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1MBI2400U4D-170 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - IGBT MODULE - Fuji Electric

भाग संख्या 1MBI2400U4D-170
समारोह IGBT MODULE
मैन्युफैक्चरर्स Fuji Electric 
लोगो Fuji Electric लोगो 
पूर्व दर्शन
1 Page
		
<?=1MBI2400U4D-170?> डेटा पत्रक पीडीएफ

1MBI2400U4D-170 pdf
1MBI2400U4D-170
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.)
5500
Tj=25°C ,chip
5000
VGE=20 15V 12V
4500
4000
3500
3000
10V
2500
2000
1500
1000
500
8V
0
0.0 1.0 2.0 3.0 4.0 5.0
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
VGE=+15V,chip
5500
5000
Tj=25°C Tj=125°C
4500
4000
3500
3000
2500
2000
1500
1000
500
0
012345
Collector-Emitter voltage : VCE [V]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25°C
1000
Cies
100
Cres
10
Coes
1
0 10 20 30
Collector-Emitter voltage : VCE [V]
IGBT Modules
Collector current vs. Collector-Emitter voltage (typ.)
5500
Tj= 125°C, chip
5000
VGE=20V 15V
12V
4500
4000
3500
3000
2500
10V
2000
1500
1000
8V
500
0
0.0 1.0 2.0 3.0 4.0 5.0
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj=25°C ,chip
10
8
6
4
Ic=4800A
2 Ic=2400A
Ic=1200A
0
5 10 15 20 25
Gate - Emitter voltage : VGE [ V ]
1000
800
Dynamic Gate charge (typ.)
Tj= 25°C
VCE
VGE
25
20
600 15
400 10
200 5
00
0 2000 4000 6000 8000 10000
Gate charge : Qg [ nC ]
2

विन्यास 6 पेज
डाउनलोड[ 1MBI2400U4D-170 Datasheet.PDF ]


शेयर लिंक


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1MBI2400U4D-170Power Devices (IGBT)ETC
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