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FK3303010L डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon N-channel MOS FET - Panasonic

भाग संख्या FK3303010L
समारोह Silicon N-channel MOS FET
मैन्युफैक्चरर्स Panasonic 
लोगो Panasonic लोगो 
पूर्व दर्शन
1 Page
		
<?=FK3303010L?> डेटा पत्रक पीडीएफ

FK3303010L pdf
DReovcisNioon. . T3 T4-EA-12576
Product Standards
MOS FET
FK3303010L
Electrical Characteristics Ta = 25C 3C
Parameter
Symbol
Conditions
Min Typ Max Unit
Drain-source breakdown voltage
VDSS ID = 1 mA, VGS = 0
30
V
Drain-source cutoff current
IDSS VDS = 30 V, VGS = 0
1.0 A
Gate-source cutoff current
IGSS VGS = 10 V, VDS = 0
10 A
Gate threshold voltage
VTH ID = 1.0 A, VDS = 3.0 V
0.5 1.0 1.5
V
Drain-source on-state resistance
RDS(on)1 ID = 10 mA, VGS = 2.5 V
RDS(on)2 ID = 10 mA, VGS = 4.0 V
36
23
Forward transfer admittance
|Yfs| ID = 10 mA, VDS = 3.0 V
20 55
mS
Input capacitance
Ciss
12 pF
Output capacitance
Coss VDS = 3 V, VGS = 0, f = 1 MHz 7 pF
Reverse transfer capacitance
Crss
3 pF
Turn-on time *1
ton
VDD = 3 V, VGS = 0 to 3 V
RL = 300
100 ns
Turn-off time *1
toff
VDD = 3 V, VGS = 3 to 0 V
RL = 300
100 ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
2. *1 Turn-on and Turn-off test circuit
V GS
V out
10%
90%
10%
90%
VDD=3V
ID=10mA
RL=300Ω
Vin
VGS=0~3V
50Ω
G
D
S
Vout
ton toff
Established : 2010-05-17
Revised : 2013-06-24
Page 2 of 5

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